1674-4926
2013 Issue 7
Effect of Fe-doping on the structural and optical properties of ZnO thin films prepared by spray pyrolysis
S.M.Salaken~1;E.Farzana~;and J.Podder~2 1 Department of Electrical and Electronic Engineering;Bangladesh University of Engineering and Technology;Dhaka-1000;Bangladesh 2Department of Physics;Bangladesh University of Engineering and Technology;Dhaka-1000;Bangladesh
S.M.Salaken~1;E.Farzana~;and J.Podder~2 1 Department of Electrical and Electronic Engineering;Bangladesh University of Engineering and Technology;Dhaka-1000;Bangladesh 2Department of Physics;Bangladesh University of Engineering and Technology;Dhaka-1000;Bangladesh
..............page:31-36
The snap-back effect of an RC-IGBT and its simulations
Zhang Wenliang~1;Tian Xiaoli~1;Tan Jingfei~2 and Zhu Yangjun 1 Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China 2Jiangsu R&D Center for Internet of Things;Wuxi 214135;China
Zhang Wenliang~1;Tian Xiaoli~1;Tan Jingfei~2 and Zhu Yangjun 1 Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China 2Jiangsu R&D Center for Internet of Things;Wuxi 214135;China
..............page:86-90
New expressions for non-punch-through and punch-through abrupt parallel-plane junctions based on Chynoweth law
Huang Haimeng and Chen Xingbi State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology of China;Chengdu 610054;China
Huang Haimeng and Chen Xingbi State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology of China;Chengdu 610054;China
..............page:63-67
Preparation of transparent conducting ZnO:Al films on glass substrates by ultrasonic spray technique
Abdelouahab Gahtar~1;Said Benramache~;Boubaker Benhaoua~1;and Foued Chabane~3 1 VTRS Laboratory;Institute of Technology;University of El-oued 39000;Algeria 2 Material Sciences Department;Faculty of Science;University of Biskra 07000;Algeria 3 Mechanics Department;Faculty of Technology;University of Biskra;Biskra 07000;Algeria
Abdelouahab Gahtar~1;Said Benramache~;Boubaker Benhaoua~1;and Foued Chabane~3 1 VTRS Laboratory;Institute of Technology;University of El-oued 39000;Algeria 2 Material Sciences Department;Faculty of Science;University of Biskra 07000;Algeria 3 Mechanics Department;Faculty of Technology;University of Biskra;Biskra 07000;Algeria
..............page:26-30
Density functional theory studies of the optical properties of a β-FeSi2 （100）/Si（001） interface at high pressure
Li Haitao Qian Jun Han Fangfang~1;and Li Tinghui~ 1 College of Electronic Engineering;Guangxi Normal University;Guilin 541004;China 2 National Laboratory of Solid State Microstructures and Department of Physics;Nanjing University;Nanjing 210093;China 3 Department of Physics;Chengde Teacher’s College for Nationalities;Chengde 067000;China
Li Haitao Qian Jun Han Fangfang~1;and Li Tinghui~ 1 College of Electronic Engineering;Guangxi Normal University;Guilin 541004;China 2 National Laboratory of Solid State Microstructures and Department of Physics;Nanjing University;Nanjing 210093;China 3 Department of Physics;Chengde Teacher’s College for Nationalities;Chengde 067000;China
..............page:11-14
Analysis of OFF-state and ON-state performance in a silicon-on-insulator power MOSFET with a low-k dielectric trench
Wang Zhigang~+;Zhang Bo;and Li Zhaoji College of Microelectronics and Solid State Electronics;University of Electronic Science and Technology of China;Chengdu 610051;China
Wang Zhigang~+;Zhang Bo;and Li Zhaoji College of Microelectronics and Solid State Electronics;University of Electronic Science and Technology of China;Chengdu 610051;China
..............page:79-85
A high voltage SOI pLDMOS with a partial interface equipotential floating buried layer
Wu Lijuan~;Zhang Wentong Zhang Bo~2;and Li Zhaoji 1 College of Communication Engineering;Chengdu University of Information Technology;Chengdu 610225;China 2 State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology of China;Chengdu 610054;China
Wu Lijuan~;Zhang Wentong Zhang Bo~2;and Li Zhaoji 1 College of Communication Engineering;Chengdu University of Information Technology;Chengdu 610225;China 2 State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology of China;Chengdu 610054;China
..............page:97-101
Effect of p-d exchange with an itinerant carrier in a GaMnAs quantum dot
D.Lalitha~1 and A.John Peter~ 1 Department of Physics;GTN College;Dindigul-624 005;India 2 Department of Physics;Government Arts College;Melur-625 106;India
D.Lalitha~1 and A.John Peter~ 1 Department of Physics;GTN College;Dindigul-624 005;India 2 Department of Physics;Government Arts College;Melur-625 106;India
..............page:1-6
Analysis of characteristics of vertical coupling microring resonator
Wang Yuhai;Qin Zhengkun~+;Wang Chunxu and Wang Lizhong College of Information Technology;Jilin Normal University;Siping 136000;China
Wang Yuhai;Qin Zhengkun~+;Wang Chunxu and Wang Lizhong College of Information Technology;Jilin Normal University;Siping 136000;China
..............page:111-115
Modeling of cylindrical surrounding gate MOSFETs including the fringing field effects
Santosh K.Gupta~ and Srimanta Baishya~2 1 Department of Electronics & Communication Engineering;Motilal Nehru National Institute of Technology Allahabad;Uttar Pradesh -211004;India 2 Department of Electronics & Communication Engineering;National Institute of Technology Silchar;Assam -788010;India
Santosh K.Gupta~ and Srimanta Baishya~2 1 Department of Electronics & Communication Engineering;Motilal Nehru National Institute of Technology Allahabad;Uttar Pradesh -211004;India 2 Department of Electronics & Communication Engineering;National Institute of Technology Silchar;Assam -788010;India
..............page:52-57
Remote scavenging technology using a Ti/TiN capping layer interposed in a metal/high-k gate stack
Ma Xueli~+;Han Kai;and Wang Wenwu Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
Ma Xueli~+;Han Kai;and Wang Wenwu Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
..............page:167-169
Facile synthesis of ZnO nanowires on FTO glass for dye-sensitized solar cells
Han Zhitao~;Li Sisi;Li Junjun;Chu Jinkui and Chen Yong 1 School of Mechanical Engineering;Dalian University of Technology;Dalian 116024;China 2Ecole Normale Superieure;CNRS-ENS-UPMC UMR 8640;75005 Paris;France
Han Zhitao~;Li Sisi;Li Junjun;Chu Jinkui and Chen Yong 1 School of Mechanical Engineering;Dalian University of Technology;Dalian 116024;China 2Ecole Normale Superieure;CNRS-ENS-UPMC UMR 8640;75005 Paris;France
..............page:58-62
A CMOS G_m-C complex filter with a reconfigurable center and cutoff frequencies in low-IF WiMAX receivers
Cheng Xin~;Yang Haigang~;Gao Tongqiang;and Yin Tao 1 Institute of Electronics;Chinese Academy of Sciences;Beijing 100190;China 2University of Chinese Academy of Sciences;Beijing 100049;China
Cheng Xin~;Yang Haigang~;Gao Tongqiang;and Yin Tao 1 Institute of Electronics;Chinese Academy of Sciences;Beijing 100190;China 2University of Chinese Academy of Sciences;Beijing 100049;China
..............page:140-146
Design and measurement of a piezoresistive ultrasonic sensor based on MEMS
Yu Jiaqi~;He Changde~2;Yuan Kejing~1;Lian Deqin Xue Chenyang~;and Zhang Wendong 1 Key Laboratory of Instrumentation Science & Dynamic Measurement;Ministry of Education;North University of China;Taiyuan 030051;China 2Key Laboratory of Science and Technology on Electronic Test & Measurement;North University of China;Taiyuan 030051;China
Yu Jiaqi~;He Changde~2;Yuan Kejing~1;Lian Deqin Xue Chenyang~;and Zhang Wendong 1 Key Laboratory of Instrumentation Science & Dynamic Measurement;Ministry of Education;North University of China;Taiyuan 030051;China 2Key Laboratory of Science and Technology on Electronic Test & Measurement;North University of China;Taiyuan 030051;China
..............page:116-122
Chemical mechanical planarization of amorphous Ge2Sb2Te5 with a soft pad
He Aodong~;Liu Bo~;Song Zhitang~1;L Yegang Li Juntao~;Liu Weili~1;Feng Songlin~1;and Wu Guanping 1 Shanghai Key Laboratory of Nanofabrication Technology for Memory;Shanghai Institute of Micro-system and Information Technology;Chinese Academy of Sciences;Shanghai 200050;China 2 University of Chinese Academy of Sciences;Beijing 100049;China 3 Semiconductor Manufacturing International Corporation;Shanghai 201203;China
He Aodong~;Liu Bo~;Song Zhitang~1;L Yegang Li Juntao~;Liu Weili~1;Feng Songlin~1;and Wu Guanping 1 Shanghai Key Laboratory of Nanofabrication Technology for Memory;Shanghai Institute of Micro-system and Information Technology;Chinese Academy of Sciences;Shanghai 200050;China 2 University of Chinese Academy of Sciences;Beijing 100049;China 3 Semiconductor Manufacturing International Corporation;Shanghai 201203;China
..............page:170-174
First-principle study on the electronic and optical properties of the anatase TiO2 （101） surface
Yang Ying;Feng Qing;Wang Weihua and Wang Yin Chongqing Key Laboratory on Optoelectronic Functional Materials;Key Laboratory of Optics and Engineering;Chongqing Normal University;Chongqing 401331;China
Yang Ying;Feng Qing;Wang Weihua and Wang Yin Chongqing Key Laboratory on Optoelectronic Functional Materials;Key Laboratory of Optics and Engineering;Chongqing Normal University;Chongqing 401331;China
..............page:37-41
A very low noise preamplifier for extremely low frequency magnetic antenna
Feng Shimin;Zhou Suihua;and Chen Zhiyi Department of Weaponry Engineering;Naval University of Engineering;Wuhan 430033;China
Feng Shimin;Zhou Suihua;and Chen Zhiyi Department of Weaponry Engineering;Naval University of Engineering;Wuhan 430033;China
..............page:135-139
Characterization of CdMnTe radiation detectors using current and charge transients
R.Rafiei~;M.I.Reinhard~1;A.Sarbutt~1;S.Uxa~3;D.Boardman~1;G.C.Watt~1;E.Belas~3;K.Kim~;A.E.Bolotnikov~4;and R.B.James~4 1 Australian Nuclear Science and Technology Organisation;Lucas Heights;NSW;2234;Australia 2 School of Electrical;Electronic and Computer Engineering;The University of Western Australia;Crawley;WA;6009;Australia 3 Faculty of Mathematics and Physics;Institute of Physics;Charles University;Ke Karlovu 5;Prague 2;CZ-121 16;Czech Republic 4 Brookhaven National Laboratory;Upton;NY 11973;USA 5Department of Radiologic Science;Korea University;Seoul;136-703;Korea
R.Rafiei~;M.I.Reinhard~1;A.Sarbutt~1;S.Uxa~3;D.Boardman~1;G.C.Watt~1;E.Belas~3;K.Kim~;A.E.Bolotnikov~4;and R.B.James~4 1 Australian Nuclear Science and Technology Organisation;Lucas Heights;NSW;2234;Australia 2 School of Electrical;Electronic and Computer Engineering;The University of Western Australia;Crawley;WA;6009;Australia 3 Faculty of Mathematics and Physics;Institute of Physics;Charles University;Ke Karlovu 5;Prague 2;CZ-121 16;Czech Republic 4 Brookhaven National Laboratory;Upton;NY 11973;USA 5Department of Radiologic Science;Korea University;Seoul;136-703;Korea
..............page:19-25
Inter valley phonon scattering mechanism in strained Si/（101）Si1-xGex
Jin Zhao~;Qiao Liping Liu Ce;Guo Chen Liu Lidong~1;and Wang Jiang’an 1 School of Information Engineering;Chang’an University;Xi’an 710064;China 2 School of Information Engineering;Tibet University for Nationalities;Xianyang 712082;China
Jin Zhao~;Qiao Liping Liu Ce;Guo Chen Liu Lidong~1;and Wang Jiang’an 1 School of Information Engineering;Chang’an University;Xi’an 710064;China 2 School of Information Engineering;Tibet University for Nationalities;Xianyang 712082;China
..............page:7-10
A self-heating study on multi-finger AlGaN/GaN high electron mobility transistors
Yang Liyuan~+;Ai Shan;Chen Yonghe;Cao Mengyi Zhang Kai~1;Ma Xiaohua~;and Hao Yue 1 Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices;School of Microelectronics;Xidian University;Xi’an 710071;China 2 School of Technical Physics;Xidian University;Xi’an 710071;China
Yang Liyuan~+;Ai Shan;Chen Yonghe;Cao Mengyi Zhang Kai~1;Ma Xiaohua~;and Hao Yue 1 Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices;School of Microelectronics;Xidian University;Xi’an 710071;China 2 School of Technical Physics;Xidian University;Xi’an 710071;China
..............page:74-78
A 16.9 dBm InP DHBT W-band power amplifier with more than 20 dB gain
Yao Hongfei;Cao Yuxiong;Wu Danyu;Ning Xiaoxi Su Yongbo;and Jin Zhi Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
Yao Hongfei;Cao Yuxiong;Wu Danyu;Ning Xiaoxi Su Yongbo;and Jin Zhi Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
..............page:147-153
A fully integrated 3.5 GHz CMOS differential power amplifier driver
Xu Xiaodong~;Yang Haigang~+;Gao Tongqiang and Zhang Hongfeng 1 institute of Electronics;Chinese Academy of Sciences;Beijing 100190;China 2University of Chinese Academy of Sciences;Beijing 100039;China
Xu Xiaodong~;Yang Haigang~+;Gao Tongqiang and Zhang Hongfeng 1 institute of Electronics;Chinese Academy of Sciences;Beijing 100190;China 2University of Chinese Academy of Sciences;Beijing 100039;China
..............page:154-159
InP-based InxGa1-xAs metamorphic buffers with different mismatch grading rates
Fang Xiang~1;Gu Yi~;Chen Xingyou~1;Zhou Li Cao Yuanying~1;Li Haosibaiyin~1;and Zhang Yonggang 1 State Key Laboratory of Functional Materials for Informatics;Shanghai Institute of Microsystem and Information Technology;Chinese Academy of Sciences;Shanghai 200050;China 2Key Laboratory of Infrared Imaging Materials and Detectors;Chinese Academy of Sciences;Shanghai 200083;China
Fang Xiang~1;Gu Yi~;Chen Xingyou~1;Zhou Li Cao Yuanying~1;Li Haosibaiyin~1;and Zhang Yonggang 1 State Key Laboratory of Functional Materials for Informatics;Shanghai Institute of Microsystem and Information Technology;Chinese Academy of Sciences;Shanghai 200050;China 2Key Laboratory of Infrared Imaging Materials and Detectors;Chinese Academy of Sciences;Shanghai 200083;China
..............page:42-46
Fabrication research on the sandwich layered cathode electrode for a triode field emission display prototype
Li Yukui~;Li Xiaoquan~1;Liu Xinghui~2;Lu Wenke;and Zeng Fanguang 1 School of Electronic Information;Zhongyuan Institute of Technology;Zhengzhou 450007;China 2School of Physics;Liaoning University;Shenyang 110036;China 3School of Information Science and Technology;Donghua University;Shanghai 201620;China 4 Department of Mathematics and Physics;Zhengzhou Institute of Aeronautical Industry Management;Zhengzhou 450015;China
Li Yukui~;Li Xiaoquan~1;Liu Xinghui~2;Lu Wenke;and Zeng Fanguang 1 School of Electronic Information;Zhongyuan Institute of Technology;Zhengzhou 450007;China 2School of Physics;Liaoning University;Shenyang 110036;China 3School of Information Science and Technology;Donghua University;Shanghai 201620;China 4 Department of Mathematics and Physics;Zhengzhou Institute of Aeronautical Industry Management;Zhengzhou 450015;China
..............page:68-73
Degradation of the front and back channels in a deep submicron partially depleted SOI NMOSFET under off-state stress
Zheng Qiwen~;Yu Xuefeng~;Cui Jiangwei~;Guo Qi~2;Cong Zhongchao~;Zhang Xingyao~;Deng Wei~;Zhang Xiaofu~;and Wu Zhengxin~ 1 Xinjiang Technical Institute of Physics & Chemistry;Chinese Academy of Sciences;Urumuqi 830011;China 2Xinjiang Key Laboratory of Electric Information Materials and Devices;Urumuqi 830011;China 3 University of Chinese Academy of Sciences;Beijing 100049;China
Zheng Qiwen~;Yu Xuefeng~;Cui Jiangwei~;Guo Qi~2;Cong Zhongchao~;Zhang Xingyao~;Deng Wei~;Zhang Xiaofu~;and Wu Zhengxin~ 1 Xinjiang Technical Institute of Physics & Chemistry;Chinese Academy of Sciences;Urumuqi 830011;China 2Xinjiang Key Laboratory of Electric Information Materials and Devices;Urumuqi 830011;China 3 University of Chinese Academy of Sciences;Beijing 100049;China
..............page:91-96
Interface roughness scattering in an AlGaAs/GaAs triangle quantum well and square quantum well
Jin Xiao~;Zhang Hong;Zhou Rongxiu~1;and Jin Zhao 1 College of Mechanical Engineering;Yantai Nanshan University;Yantai 265713;China 2 School of Foreign Languages;Beijing Forestry University;Beijing 100083;China
Jin Xiao~;Zhang Hong;Zhou Rongxiu~1;and Jin Zhao 1 College of Mechanical Engineering;Yantai Nanshan University;Yantai 265713;China 2 School of Foreign Languages;Beijing Forestry University;Beijing 100083;China
..............page:15-18
A low power discrete operation mode for punchthrough phototransistor
Zhou Quan;Guo Shuxu;Song Jingyi;Li Zhaohan Du Guotong;and Chang Yuchun State Key Laboratory on Integrated Optoelectronics;College of Electronic Science and Engineering;Jilin University;Changchun 130012;China
Zhou Quan;Guo Shuxu;Song Jingyi;Li Zhaohan Du Guotong;and Chang Yuchun State Key Laboratory on Integrated Optoelectronics;College of Electronic Science and Engineering;Jilin University;Changchun 130012;China
..............page:102-105
A 5 Gb/s low power current-mode transmitter with pre-emphasis for serial links
Lu Junsheng;Ju Hao;Ye Mao;Zhang Feng Zhao Jianzhong;and Zhou Yumei Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
Lu Junsheng;Ju Hao;Ye Mao;Zhang Feng Zhao Jianzhong;and Zhou Yumei Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
..............page:128-134
Experimental investigation of limit space charge accumulation mode operation in a semi-insulating GaAs photoconductive semiconductor switch
Ma Xiangrong~;Shi Wei~1;and Xiang Mei~2 1 Departments of Applied Physics;Xi’an University of Technology;Xi’an 710048;China 2 Institute of Physics and Electronic Engineering;Xinjiang Normal University;Urumqi 830054;China
Ma Xiangrong~;Shi Wei~1;and Xiang Mei~2 1 Departments of Applied Physics;Xi’an University of Technology;Xi’an 710048;China 2 Institute of Physics and Electronic Engineering;Xinjiang Normal University;Urumqi 830054;China
..............page:106-110
A 65 nm CMOS high efficiency 50 GHz VCO with regard to the coupling effect of inductors
Ye Yu~ and Tian Tong 1 Key Laboratory of Terahertz Solid-State Technology;Shanghai Institute of Micro-system and Information Technology;Chinese Academy of Sciences;Shanghai 200050;China 2University of Chinese Academy of Sciences;Beijing 100049;China 3Intemet of Things System Technology Laboratory;Shanghai Institute of Micro-system and Information Technology;Chinese Academy of Sciences;Shanghai 200050;China
Ye Yu~ and Tian Tong 1 Key Laboratory of Terahertz Solid-State Technology;Shanghai Institute of Micro-system and Information Technology;Chinese Academy of Sciences;Shanghai 200050;China 2University of Chinese Academy of Sciences;Beijing 100049;China 3Intemet of Things System Technology Laboratory;Shanghai Institute of Micro-system and Information Technology;Chinese Academy of Sciences;Shanghai 200050;China
..............page:123-127
Large area graphene produced via the assistance of surface modification
Zhang Yang;Dou Wei;Luo Wei;Lu Weier;Xie Jing Li Chaobo;and Xia Yang Key Laboratory of Microelectronics Devices & Integrated Technology;Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
Zhang Yang;Dou Wei;Luo Wei;Lu Weier;Xie Jing Li Chaobo;and Xia Yang Key Laboratory of Microelectronics Devices & Integrated Technology;Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
..............page:47-51
I/Q mismatch calibration based on digital baseband
Lei Qianqian~+;Zhao Erhu~1;Yuan Fang;Lin Min Li Lianbi~1;and Feng Song 1 Department of Physics;Xi’an Polytechnic University;Xi’an 710048;China 2 Suzhou-CAS Semiconductors Integrated Technology Research Center;Suzhou 215021;China
Lei Qianqian~+;Zhao Erhu~1;Yuan Fang;Lin Min Li Lianbi~1;and Feng Song 1 Department of Physics;Xi’an Polytechnic University;Xi’an 710048;China 2 Suzhou-CAS Semiconductors Integrated Technology Research Center;Suzhou 215021;China
..............page:160-166
Modulation of the effective work function of a TiN metal gate for NMOS requisition with Al incorporation
Han Kai;Ma Xueli;Yang Hong and Wang Wenwu Key Laboratory of Microelectronics Devices & Integrated Technology;Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
Han Kai;Ma Xueli;Yang Hong and Wang Wenwu Key Laboratory of Microelectronics Devices & Integrated Technology;Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
..............page:175-178