1007-0206
1995 Issue Z1
Integrated model optocouplers
LI Yinghui;QI Tianyou
LI Yinghui;QI Tianyou
..............page:77-80
..............page:24-30
128×128 element PtSi infrared CCD image sensor
YANG Jiade;LIU Jungang;LI Zuojin;YANG Yasheng
YANG Jiade;LIU Jungang;LI Zuojin;YANG Yasheng
..............page:43-51
1.3μm high-power superluminescent diode
LIU Mingda;SHI Jiawei;MA Dongge;JIN Enshun;LI Shuwen
LIU Mingda;SHI Jiawei;MA Dongge;JIN Enshun;LI Shuwen
..............page:67-70
Ion implantation of semi-insulating InP materials
ZENG Qinggao
ZENG Qinggao
..............page:1-8
Strain measurement using frequency modulation fiber optic interferometer
LI Changchun;LUO Fei
LI Changchun;LUO Fei
..............page:31-34
Analysis on porous Si PL from quantum confinement effect
WANG Kaiyuan;TANG Jieying
WANG Kaiyuan;TANG Jieying
..............page:84-87
New dark current component of InGaAs/InP HPDs confirmed by DLTS
WANG Kaiyuan;XU Weihong
WANG Kaiyuan;XU Weihong
..............page:20-23
10 W QCW operation of a proton implanted GaAlAs diode laser array
ZHANG Daoyin;HU Siqiang;MHO Qingfeng
ZHANG Daoyin;HU Siqiang;MHO Qingfeng
..............page:52-56
Study on optical compound films
ZHANG H W ROBERT C Q
ZHANG H W ROBERT C Q
..............page:81-83
Analytical model of a superluminescent diode
MA Dongge;SHI Jiawei;GAO Dingsan
MA Dongge;SHI Jiawei;GAO Dingsan
..............page:71-76
High performance superluminescent diodes at 1.3μm wavelength
ZHU Zhiwen;CAI Haiqing
ZHU Zhiwen;CAI Haiqing
..............page:62-66
dependence of surface morphology of cvd diamond films on deposition conditions
YANG Guowei MAO Yude
YANG Guowei MAO Yude
..............page:88-92
..............page:9-19
Storage capacity of complex Hopfield model
SHUAI J W;CHEW Z X;LIU R T;WU B X
SHUAI J W;CHEW Z X;LIU R T;WU B X
..............page:35-42
1.3μm wide bandwidth semiconductor laser module
WAWG Pinhong;CHI Kaiqing
WAWG Pinhong;CHI Kaiqing
..............page:57-61