1003-353X
2008 Issue 2
..............page:185-186
mian xiang qi che xin xi yu le shi chang fei si ka er sheng ji gao pin zhi de che yong i.mx ying yong chu li qi
fei si ka er ban dao ti ( zhong guo ) you xian gong si
fei si ka er ban dao ti ( zhong guo ) you xian gong si
..............page:183-184
Design of Sample-Hold Circuit for High-Speed ADC
Lin Jiaming;Dai Qingyuan;Xie Zhanqi;Ni Dan
Lin Jiaming;Dai Qingyuan;Xie Zhanqi;Ni Dan
..............page:179-182
New Design of Asynchronous Tree Arbiter
Xu Yangyang;Zhou Duan;Yang Yintang;Mi Xiaohua
Xu Yangyang;Zhou Duan;Yang Yintang;Mi Xiaohua
..............page:176-178
..............page:171-175
Ant Colony Routing Algorithm for NOC Based on Packet Network Structure
Chen Qing;Hao Yue;Cai Jueping
Chen Qing;Hao Yue;Cai Jueping
..............page:167-170
Design and Implement of Microwave Wide-Band MMIC Divide-By-2 Divider
Chen Fengxia;Mo Lidong;Wu Sihan
Chen Fengxia;Mo Lidong;Wu Sihan
..............page:164-166
Modeling and Multi-Parameter Simulation in Thermosonic Bonding Process
Li Limin;Wu Yunxin;Long Zhili
Li Limin;Wu Yunxin;Long Zhili
..............page:160-163
Measurement and Calculation of Specific Contact Resistance in Metal-Semiconductor Contacts
Li Hongjian;Shi Ying
Li Hongjian;Shi Ying
..............page:155-159
..............page:151-154
Fabrication of Ti/4H-SiC Ohmic Contact by Annealing at Low Temperature
Chen Suhua;Wang Haibo;Zhao Liang;Ma Jikai
Chen Suhua;Wang Haibo;Zhao Liang;Ma Jikai
..............page:147-150
Effects of SiOx in the Improvement of BJT Characteristics
Wang Youbin;Wang Hui
Wang Youbin;Wang Hui
..............page:144-146
Study of InP-Based Resonant Tunneling Diode
Li Yali;Zhang Xiongwen;Feng Zhen;Zhou Rui;Zhang Zhiguo
Li Yali;Zhang Xiongwen;Feng Zhen;Zhou Rui;Zhang Zhiguo
..............page:141-143
Design of Energy-Saving Intelligent LED Illumination System
Zhao Ling;Zhu Anqing
Zhao Ling;Zhu Anqing
..............page:137-140
Comparison and Analysis Between 6H-and 4H-SiC Power VDMOSFETs
Zhang Juan;Chai Changchun;Yang Yintang;Xu Junping
Zhang Juan;Chai Changchun;Yang Yintang;Xu Junping
..............page:133-136
Analytical Model of DC Ⅰ-Ⅴ Characteristics of 4H-SiC MESFETs
Ren Xuefeng;Yang Yintang;Jia Hujun
Ren Xuefeng;Yang Yintang;Jia Hujun
..............page:129-132
Effect of Al Surfactant in the Growth of InGaN
Yuan Fengpo;Yin Jiayun;Liu Bo;Liang Dong;Feng Zhihong
Yuan Fengpo;Yin Jiayun;Liu Bo;Liang Dong;Feng Zhihong
..............page:126-128
Study of SiO2/4H-SiC Interface Composition by XPS
Zhao Liang;Wang Dejun;Ma Jikai;Chen Suhua;Wang Haibo
Zhao Liang;Wang Dejun;Ma Jikai;Chen Suhua;Wang Haibo
..............page:121-125
Preparation of Poly-Si Film on Upgraded Metallurgical Si Substrate by ECR-PECVD
Cui Hongtao;Wu Aimin;Qin Fuwen;Tan Yi;Wen Lishi;Jiang Xin
Cui Hongtao;Wu Aimin;Qin Fuwen;Tan Yi;Wen Lishi;Jiang Xin
..............page:117-120
Effects of Oxygen Pressure on Absorption Property and the Structure of Mn-Doped ZnO Thin Film
Yang Bingchu;Zhang Li;Ma Xuelong;Yan Jiantang
Yang Bingchu;Zhang Li;Ma Xuelong;Yan Jiantang
..............page:113-116
Preparation of Al-Doped Si-Rich/SiO2 Thin Film and Its Ultraviolet Photoluminescence Characteristics
Wang Guoli;Guo Hengqun
Wang Guoli;Guo Hengqun
..............page:109-112
Fabrication of (Bi3.7Dy0.3) (Ti2.8V0.2)O12Thin Films and Influence of Annealing Temperature
Tang Junxiong;Tang Minghua;Yang Feng;Zhang Junjie;Zhou Yichun;Zheng Xuejun
Tang Junxiong;Tang Minghua;Yang Feng;Zhang Junjie;Zhou Yichun;Zheng Xuejun
..............page:106-108,175
Packaging Technology of Optoelectronic Window
Li Chengtao;Shen Zhuoshen
Li Chengtao;Shen Zhuoshen
..............page:102-105,143
Research of Failure Mechanism on Plastic Encapsulated Microelectronics Device
Li Xin;Zhou Yi;Sun Chengsong
Li Xin;Zhou Yi;Sun Chengsong
..............page:98-101
High-k Replacement of Ultrathin Gate Dielectrics for Nanoscale MOS Transistors (Ⅱ)
Weng Yan;Wang Hui
Weng Yan;Wang Hui
..............page:93-97