1003-353X
2008 Issue 8
..............page:738
..............page:737
Wide-Band Frequency Synthesizer Based on DDS+PLL Designed and Achieved
Song Qinghua;Xu Zhengfang
Song Qinghua;Xu Zhengfang
..............page:734-736
Design of Multi-Protocol Programmable Input Interface Based on High-Performance Digital Chips
Chen Lei;Chen Ziyan;Yang Hua;Lai Zongsheng;Jing Weiping
Chen Lei;Chen Ziyan;Yang Hua;Lai Zongsheng;Jing Weiping
..............page:730-733
Design of Low-Consumption and High-Gain CMOS LNA
Yi Tingrong;Cheng Li;Wang Ling;Fan Hanhua;Zhi Wanjiang
Yi Tingrong;Cheng Li;Wang Ling;Fan Hanhua;Zhi Wanjiang
..............page:726-729
Design of Phase Interpolation and Selection Circuit for CDR
Zeng Zecang;Deng Junyong;Jiang Lin
Zeng Zecang;Deng Junyong;Jiang Lin
..............page:721-725
..............page:718-720
Simulation Model of Epoxy Probe Card Consuming
Yan Fei;Huang Qiyu
Yan Fei;Huang Qiyu
..............page:714-717
Design for Pasting Device Based on ADAMS Simulation
Jiang Yongjun;Lin Xiaoxin;Wu Xiaohong;Cao Zhanlun;Yuan Xilin
Jiang Yongjun;Lin Xiaoxin;Wu Xiaohong;Cao Zhanlun;Yuan Xilin
..............page:711-713
Study on the Effect of ESD and EMP Radiation Damage on Microwave Semiconductor Devices
Liu Hongbing;Wang Changhe;Zhao Tong;Li Yongbing;Yang Jie
Liu Hongbing;Wang Changhe;Zhao Tong;Li Yongbing;Yang Jie
..............page:705-710
Study of Abrasive in Cu Interconnects CMP in ULSI
Sun Wei;Liu Yuling;Zhang Wei;Shi Huiling;Hou Lihui
Sun Wei;Liu Yuling;Zhang Wei;Shi Huiling;Hou Lihui
..............page:662-665
Study on Effect Factors of Polishing Rate in the CMP Technology for Glass-Ceramics
Li Xianzhen;Liu Yuling;Zong Simiao;Zhang Wei;Jiang Yan
Li Xianzhen;Liu Yuling;Zong Simiao;Zhang Wei;Jiang Yan
..............page:658-661,673
Study and Status of AlGaInP LED Based on GaAs Substrate
Zhan Ying;Niu Pingjuan;Li Xiaoyun;Wang Xiaoli;Peng Xiaolei
Zhan Ying;Niu Pingjuan;Li Xiaoyun;Wang Xiaoli;Peng Xiaolei
..............page:654-657,669
Recent Development of TPV Cells Based on Ⅲ-Ⅴ Group Semiconductor Materials
Fang Silin;Yu Shuwen;Liu Weifeng;Liu Aimin
Fang Silin;Yu Shuwen;Liu Weifeng;Liu Aimin
..............page:649-653
Preparation of ZnO/(Ni)Thin Film and Studies on Its Photoluminescence Properties
Gao Fei;Wu Zaihua;Liu Xiaoyan
Gao Fei;Wu Zaihua;Liu Xiaoyan
..............page:701-704
Improvement for 0.15 μm Low Voltage CMOS Process
Sun Xile;Wang Hui
Sun Xile;Wang Hui
..............page:698-700
Surface Morphology Evolution of TiN Thin Films Characterized by Fractal Methods
Zhao Haikuo;Luo Xiangdong
Zhao Haikuo;Luo Xiangdong
..............page:694-697
Effect of Rapid Thermal Annealing at Ar Ambient on FPD in CZ-Si Crystals
Qiao Zhi;Li Tongkai;Liu Caiehi;Ji Jianli;Zhang Yanli
Qiao Zhi;Li Tongkai;Liu Caiehi;Ji Jianli;Zhang Yanli
..............page:691-693
Influence of Annealing Temperature on CoTiO2 Magnetic Properties and Microstructure
Qu Jiao;Jia Liyun;Xu Jialing;Hou Denglu
Qu Jiao;Jia Liyun;Xu Jialing;Hou Denglu
..............page:688-690
Impact of Ge Profile on Main Electrical Characteristics of SiGe
Wang Xuan;Xu Biye;He Lenian
Wang Xuan;Xu Biye;He Lenian
..............page:683-687
Effect of Scalling Down on the Characteristic of Trench MOSFET
Chen Kaiyu;Liu Peilin
Chen Kaiyu;Liu Peilin
..............page:680-682
Research on X-Band GaN HEMT
Wang Yong;Feng Zhen;Song Jianbo;Li Jingqiang;Feng Zhihong;Yang Kewu
Wang Yong;Feng Zhen;Song Jianbo;Li Jingqiang;Feng Zhihong;Yang Kewu
..............page:677-679
Analysis and Solutions for Post Cu-CMP Crater Defect
Chen Xiaoke;Cheng Xiulan;Zhou Hua
Chen Xiaoke;Cheng Xiulan;Zhou Hua
..............page:674-676
Design of CMP End-Point Detector
Wang Xuejun;Wang Shuyuan;He Jingliang;Liu Bin;Zhou Guoan
Wang Xuejun;Wang Shuyuan;He Jingliang;Liu Bin;Zhou Guoan
..............page:670-673
Effect of Polishing Slurry on Removal Rate of LiNb03 CMP
Hou Lihui;Liu Yuling;Wang Shengli;Sun Wei;Shi Huiling;Zhang Wei
Hou Lihui;Liu Yuling;Wang Shengli;Sun Wei;Shi Huiling;Zhang Wei
..............page:666-669
Tuning Characteristics Comparison of Three ECLD Models
Huang Liping;Pan Wei
Huang Liping;Pan Wei
..............page:645-648