1003-353X
2009 Issue 3
Key Points of Improving the LED Technology in Terms of the Indoor Illumination Developing Trend
Tang Guoqing
Tang Guoqing
..............page:201-204
Recent Progress of ACF in Flat Panel Display Packaging Applications
Zhang Yingyi;Fu Yuepeng;Tan Kai;Tian Minbo
Zhang Yingyi;Fu Yuepeng;Tan Kai;Tian Minbo
..............page:205-209
Design and Realization of High Efficiency Class F Power Amplifier for Interphone Application
Nan Jingchang;Liu Lei
Nan Jingchang;Liu Lei
..............page:295-298
DC to 20 GHz Broadband MMIC Digital Attenuator
Liu Zhijun;Fang Yuan;Gao Xuebang;Wu Hongjiang
Liu Zhijun;Fang Yuan;Gao Xuebang;Wu Hongjiang
..............page:287-290
Study and Design of Small Size VHF Power Amplifier Module
Li Junmin;Liu Yingkun
Li Junmin;Liu Yingkun
..............page:283-286
Application of Prognostic Technology in IC Design
Li Chun;Di Mary
Li Chun;Di Mary
..............page:279-282,286
..............page:275-278
..............page:270-274
Z-Axis Movement Signal Analysis of Capillary for Wire Bonding
Gan Haitao;Gao Jian;Chen Xin
Gan Haitao;Gao Jian;Chen Xin
..............page:266-269
Study on Automatic Test of DDS
Zhang Kaihong;Lu Feng;Zhou Yali;Yu Zongguang
Zhang Kaihong;Lu Feng;Zhou Yali;Yu Zongguang
..............page:262-265
Analysis of Current Sense Noise in the Buck Converter System
Liu Yuxing;Feng Quanyuan
Liu Yuxing;Feng Quanyuan
..............page:258-261,274
Analysis of 2-D Short-Channel MOSFET Threshold Voltages Model
Li Haixia;Mao Lingfeng
Li Haixia;Mao Lingfeng
..............page:254-257
Design of High Isolation Contact/Capacitive RF MEMS Switch with Wide Bandwidth
Sun Jianhai;Cui Dafu;Zhang Lulu
Sun Jianhai;Cui Dafu;Zhang Lulu
..............page:251-253,265
Impact of Double-Hump Substrate Current on the Degradation of High Voltage MOS Transistor
Liu Bo;Wang Lei;Feng Zhigang;Wang Jun;Li Wenjun;Cheng Xiulan
Liu Bo;Wang Lei;Feng Zhigang;Wang Jun;Li Wenjun;Cheng Xiulan
..............page:247-250
Study of Special. Type Fast High Power Semiconductor Opening Switches
Yang Yong;Liu Yingkun;Cui Zhandong;Liu Zhongshan;Ma Hongmei;Chen Hongbin
Yang Yong;Liu Yingkun;Cui Zhandong;Liu Zhongshan;Ma Hongmei;Chen Hongbin
..............page:244-246,290
Investigation on pMOSFET During Hot-Carrier Degradation by DCIV Method
Feng Zhigang;He Boyong
Feng Zhigang;He Boyong
..............page:240-243
Research on Trench MOSFET for High-Frequent Control Switch
Wang Cuixia;Xu Weisheng;Xie Fuyuan;Chen Ju;Wu Qidi
Wang Cuixia;Xu Weisheng;Xie Fuyuan;Chen Ju;Wu Qidi
..............page:236-239
Effect of the Valley-Orbit Splitting in SiC on the Dopant Ionization
Dai Zhenqing;Yang Kewu;Yang Ruixia
Dai Zhenqing;Yang Kewu;Yang Ruixia
..............page:232-235
Influence of Doping on Field Emission of Amorphous Carbon Thin Films
Liu Xiongfei;Li Boxun;Xu Gen
Liu Xiongfei;Li Boxun;Xu Gen
..............page:228-231
Novel Method of Fabricating Porous Silica Film with Two Step Catalyze Sol-Gel Process
Zheng Weifeng;Li Jinhua;Zhao Meng;Fu Xuecheng
Zheng Weifeng;Li Jinhua;Zhao Meng;Fu Xuecheng
..............page:225-227
Analysis of the Influence of Stress Induced by Cu Via on CMOS Mobility
Xu Jianhua;Wang Hui
Xu Jianhua;Wang Hui
..............page:221-224
Novel Method for Calculating Base Doping Concentration of Field Stop IGBT
Tang Yong;Hu An;Li Ping
Tang Yong;Hu An;Li Ping
..............page:217-220
Smooth and Steep Deep Silicon Etching
Zhang Yusheng
Zhang Yusheng
..............page:214-216,220
Overview of High Temperature Micro-System Packaging Technology in America
Chen Yan;Guo Hong;Li Xiuqing
Chen Yan;Guo Hong;Li Xiuqing
..............page:210-213,278