1003-353X
2009 Issue 8
Effect of pH on Roughness of InSb in CMP
Kang Haiyan;Liu Yuling;Wu Caixia;Su Yanqin;Yang Weiping;Liu Xiaoyan
Kang Haiyan;Liu Yuling;Wu Caixia;Su Yanqin;Yang Weiping;Liu Xiaoyan
..............page:734-736
Study on the Removal Rate of CMP for Tungsten Plug in ULSI
Zhang Jin;Liu Yuling;Shen Xiaoning;Zhang Wei;Su Yanqin
Zhang Jin;Liu Yuling;Shen Xiaoning;Zhang Wei;Su Yanqin
..............page:737-740
Effect of Polishing Processes on the Roughness of GaAs Wafers
Lü Fei;Wang Yunbiao;Zhang Weicai;Wu Yongchao;Zhao Quan
Lü Fei;Wang Yunbiao;Zhang Weicai;Wu Yongchao;Zhao Quan
..............page:745-747,786
Investigation of Surface Roughness for Sapphire Substrate
Wei Heng;Liu Yuling;Chen Ting;Sun Yelin;Liu Xiaoyan
Wei Heng;Liu Yuling;Chen Ting;Sun Yelin;Liu Xiaoyan
..............page:741-744
Analysis and Research on the Surface Roughness of the Copper Multilayer Interconnection CMP in ULSI
Su Yanqin;Liu Yuling;Liu Xiaoyan;Kang Haiyan;Wu Caixia;Zhang Jin
Su Yanqin;Liu Yuling;Liu Xiaoyan;Kang Haiyan;Wu Caixia;Zhang Jin
..............page:730-733
..............page:726-729
Status of InP/GaAsSb/InP Double Heterojunction Bipolar Transistors Technology
Qi Zhihua;Li Xianjie
Qi Zhihua;Li Xianjie
..............page:721-725
Power Performance of Common-Base and Common-Emitter InP DHBTs
Wang Xiantai;Jin Zhi;Cheng Wei;Su Yongbo;Shen Huajun
Wang Xiantai;Jin Zhi;Cheng Wei;Su Yongbo;Shen Huajun
..............page:759-762
..............page:751-754
Accurate Approximate Calculation of Fermi Integral for Device Design
Meng Hui;Wang Jianfeng
Meng Hui;Wang Jianfeng
..............page:755-758
Newly Developed RELACS Process for T-Gate Fabrication
Fu Xingchang;Hu Ling
Fu Xingchang;Hu Ling
..............page:748-750