1003-353X
2012 Issue 4
Novel Compact Microstrip U-Shape Ultra-Wide-Band (UWB) Filter
Xu Yue;Wang Shengfu;Lu Guolin;Shi Juan
Xu Yue;Wang Shengfu;Lu Guolin;Shi Juan
..............page:291-294,311
p-i-n Switch Diode Design in SiGe HBT BiCMOS Process
Liu Donghua;Hu Jun;Qian Wensheng;Chen Fan;Chen Xiongbin;Duan Wenting
Liu Donghua;Hu Jun;Qian Wensheng;Chen Fan;Chen Xiongbin;Duan Wenting
..............page:271-275
Neural Network Based Intelligent R2R Predictive Control to CMP Process
Wang Liang;Hu Jingtao
Wang Liang;Hu Jingtao
..............page:305-311
Study of the Graded Buffer Layer Effect on GaInAs by X-Ray Diffractometer
Jiao Gangcheng;Liu Zhengtang;Shi Feng;Xu Xiaobing;Hu Canglu
Jiao Gangcheng;Liu Zhengtang;Shi Feng;Xu Xiaobing;Hu Canglu
..............page:288-290,325
High Temperature Oxidation and Dielectric Deposition Technologies in 4H-SiC MESFET Process
Fu Xingchang;Pan Hongshu
Fu Xingchang;Pan Hongshu
..............page:280-283
Effect of Shunt Capacitance on Class DE Power Amplifier
Liu Chang;Li Kang;Kong Fanmin
Liu Chang;Li Kang;Kong Fanmin
..............page:299-304
Effects of Different Alkaline Agents and Dispersant on the Lapping of Sapphire Substrate
Zhang Zefang;Liu Weili;Song Zhitang
Zhang Zefang;Liu Weili;Song Zhitang
..............page:267-270
Study of LDMOS Device over 600 V on Thin Film SOI
Wang Zhongjian;Xia Chao;Xu Dawei;Cheng Xinhong;Song Zhaorui;Yu Yuehui
Wang Zhongjian;Xia Chao;Xu Dawei;Cheng Xinhong;Song Zhaorui;Yu Yuehui
..............page:254-257
..............page:328,326-327
..............page:316-320
Study on Process Technology of SiGe/Si HBT
Jia Sumei;Yang Ruixia;Liu Yingkun;Deng Jianguo;Gao Yuan
Jia Sumei;Yang Ruixia;Liu Yingkun;Deng Jianguo;Gao Yuan
..............page:276-279,304
Research on the Anti-Radiation Design and Test of GaAs 10 bit DAC
Tian Guoping;Wu Hongjiang;Zhu Sicheng
Tian Guoping;Wu Hongjiang;Zhu Sicheng
..............page:249-253
Research on LED Light Source Lumens Depreciation Rule
Cui Zeying;Gu Qingbo
Cui Zeying;Gu Qingbo
..............page:312-315
SiO2 Slurry Delivered by Ultrasonic Fine Atomized Form
Zhai Jing;Li Qingzhong
Zhai Jing;Li Qingzhong
..............page:263-266,311
X-Band High Power T/R Module
Wang Kanghan
Wang Kanghan
..............page:295-298
Research on Materials of AlGaN Based p-i-n Solar-Blind Ultraviolet Detectors
Liu Bo;Yuan Fengpo;Yin Jiayun;Sheng Baicheng;Fang Yulong;Feng Zhihong
Liu Bo;Yuan Fengpo;Yin Jiayun;Sheng Baicheng;Fang Yulong;Feng Zhihong
..............page:284-287,298
Accelerate Lifetime Test for S-Band Si Microwave Power Transistor
Tong Liang;Peng Hao;Gao Jinhuan;Huang Jie
Tong Liang;Peng Hao;Gao Jinhuan;Huang Jie
..............page:321-325
Development of High-Voltage Trench IGBT
Tang Hongxiang;Ji Jianxin;Sun Xiangdong;Sun Yongsheng;Cao Liang
Tang Hongxiang;Ji Jianxin;Sun Xiangdong;Sun Yongsheng;Cao Liang
..............page:258-262