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Semiconductor Technology
1003-353X
2013 Issue 10
Epitaxial Growth of High-Quality GaN Films on Various Oxide Substrates
Li Guoqiang;Guan Yunfang;Gao Fangliang;State Key Laboratory of Luminescent Materials and Devices;South China University of Technology;Department of Electronic Materials;School of Materials Science and Engineering;South China University of Technology;
..............page:721-728
Research Progress of Excition Diffusion Dynamics in Semiconductor Materials
Wang Li;Wang Qinglu;Wang Zhigang;The Physics Department;Tangshan Teachers College;
..............page:729-734
A Single-End Programmable Sensitive Amplifier for the High Density RRAM
Ma Wenlong;Zhang Feng;Yang Hongguan;Chen Chengying;School of Physics and Electronics;Hunan University;Institute of Microelectronics;Chinese Academy of Sciences;
..............page:735-739
Two-Level Supply Modulated Doherty Power Amplifier
Qiao Ke;Tang Zongxi;School of Electronic Engineering;University of Electronic science and Technology of China;
..............page:740-744
Simulation of 600 V Novel Trench-Gate ITC-IGBT
Zhang Huihui;Hu Dongqing;Wu Yu;Jia Yunpeng;Zhou Xintian;Mu Xin;School of Electronic Information and Control Engineering;Beijing University of Technology;
..............page:745-749+775
Application of the Alkaline Barrier Slurry on the Planarization of 65 nm Multilayer Copper Wiring
Chen Rui;Liu Yuling;Wang Chenwei;Cai Ting;Gao Jiaojiao;He Yangang;Institute of Microelectronics;Hebei University of Technology;
..............page:750-754
Interface Optimization and Characterization of PEALD HfO2 Gate Dielectric Film
Xu Dawei;Cheng Xinhong;Cao Duo;Zheng Li;Wan Wenyan;Yu Yuehui;State Key Laboratory of Functional Materials for Informatics;Shanghai Institute of Micro-System and Information Technology;Chinese Academy of Sciences;University of Chinese Academy of Sciences;
..............page:755-759
Resistive Switching Characteristics of ZrO2 -Doped Material Based on First Principle Study
Zhou Xing;Wang Jianjun;Gao Shan;Chen Junning;Institute of Electronic and Information Project;Anhui University;
..............page:760-764
Preparation and Photocatalytic Activity of Zn-Doped TiO2 Nanotube Array
Xiao Tao;Deng Shengping;Fan Huanxin;Department of Physics;Kaili University;
..............page:765-769
Simulation of Several SPICE Models for Through Silicon Via Structure
Pang Cheng;Wang Zhi;Yu Daquan;National Centre for Advanced Packaging;Jiangsu R&D Centre for Internet of Things;Institute of Microelectronics;Chinese Academy of Sciences;
..............page:770-775
Simulation Method of Improving ESD Protection Capability of Integrated Circuits
Li Song;Zeng Chuanbin;Luo Jiajun;Han Zhengsheng;Institute of Microeletronics;Chinese Academy of Sciences;
..............page:776-780
Analysis Method of 6T-SRAM Shared CT Failure’s Localization
Zhong Qianghua;Qiu Yanpeng;Wang Li;Semiconductor Manufacturing International Corporation;
..............page:781-785
ESD Failure Mechanism of 0. 13 μm IC Product MM Mode
Wu Fengxia;Shen Junliang;Cai Bin;Beijing NARI Smartchip Microelectronics Co.;Ltd.;
..............page:786-791
Applications of Ultrasonic Inspection in Semiconductor Technology
Zhang Minshu;Xie An;Lee Shiwei;School of Materials Science and Engineering;Xiamen University of Technology;CAMP;Hong Kong University of Science and Technology;
..............page:792-796
ban dao ti ji shu gao yue
..............page:799
wei na dian zi ji shu jian jie
..............page:800