1003-353X
2013 Issue 12
Research Progress on N-Polar GaN Based HEMTs
Wang Xianbin;Zhao Zhengping;Fang Yulong;Feng Zhihong;College of Information Engineering;Hebei University of Technology;National Key Laboratory of ASIC;
Wang Xianbin;Zhao Zhengping;Fang Yulong;Feng Zhihong;College of Information Engineering;Hebei University of Technology;National Key Laboratory of ASIC;
..............page:881-892+904
Design of Continuous-Rate CDR Circuit in 0. 18 μm CMOS Process
Ma Qingpei;Zhang Changchun;Chen Deyuan;Liu Leilei;Guo Yufeng;School of Electronic Science and Engineering;Nanjing University of Posts and Telecommunication;National Key Laboratory of Millimeter Waves;Southeast University;
Ma Qingpei;Zhang Changchun;Chen Deyuan;Liu Leilei;Guo Yufeng;School of Electronic Science and Engineering;Nanjing University of Posts and Telecommunication;National Key Laboratory of Millimeter Waves;Southeast University;
..............page:893-898
Design of Amplitude-Programmed DAC Applied for Open-Loop GFSK Modulator
Chen Weiqing;Li Fuhua;Yin Yadong;School of Electronic and Information Engineering;Soochou University;Kunshan Institute of Microelectronics;The Chinese Academy of Sciences;Institute of Microelectronics;The Chinese Academy of Sciences;
Chen Weiqing;Li Fuhua;Yin Yadong;School of Electronic and Information Engineering;Soochou University;Kunshan Institute of Microelectronics;The Chinese Academy of Sciences;Institute of Microelectronics;The Chinese Academy of Sciences;
..............page:899-904
Design of High-Accuracy RC Circuit Based on CMOS Techniques
Yang Wei;Lu Zhenghao;Jiang Meng;Department of Mechano-Electronic Engineering;Zhangjiagang Branch of Vocational School of Jiangsu Province;Electronic Information-College;Soochow University;Suzhou Huaxin Micro-Electronics Co.;Ltd.;
Yang Wei;Lu Zhenghao;Jiang Meng;Department of Mechano-Electronic Engineering;Zhangjiagang Branch of Vocational School of Jiangsu Province;Electronic Information-College;Soochow University;Suzhou Huaxin Micro-Electronics Co.;Ltd.;
..............page:905-909+928
GaAs E /D PHEMT Positive Control Digital Attenuator MMIC
Bai Yuanliang;Zhang Xiaopeng;Chen Fengxia;Mo Lidong;The 13th Research Institute;CETC;
Bai Yuanliang;Zhang Xiaopeng;Chen Fengxia;Mo Lidong;The 13th Research Institute;CETC;
..............page:910-913+923
Influence of Cavity Length on Single Emitter Semiconductor Laser Performance
Zhang Yong;Yang Ruixia;An Zhenfeng;Liu Xiaowen;Xu Huiwu;Zhao Run;Yuan Chunsheng;College of Information Engineering;Hebei University of Technology;The 13th Research Institute;CETC;
Zhang Yong;Yang Ruixia;An Zhenfeng;Liu Xiaowen;Xu Huiwu;Zhao Run;Yuan Chunsheng;College of Information Engineering;Hebei University of Technology;The 13th Research Institute;CETC;
..............page:914-918
Design of Compact P-Band 1 kW Power Amplifier
Yang Dabao;Shen Linze;National Key Laboratory of ASIC;The 13thResearch Institute;CETC;
Yang Dabao;Shen Linze;National Key Laboratory of ASIC;The 13thResearch Institute;CETC;
..............page:919-923
Evaluating AlGaN /GaN Heterostructure Schottky Barrier Height by Temperature-Independence Point
Ma Chunlei;Feng Zhihong;The 13th Research Institute;CETC;Science and Technology on ASIC Laboratory;
Ma Chunlei;Feng Zhihong;The 13th Research Institute;CETC;Science and Technology on ASIC Laboratory;
..............page:924-928
Research of Aluminum Alloy CMP under Alkaline Condition
Yang Haokun;Liu Yuling;Sun Ming;Chen Rui;Liu Jia;Tian Yuan;Institute of Microelectronics;Hebei University of Technology;
Yang Haokun;Liu Yuling;Sun Ming;Chen Rui;Liu Jia;Tian Yuan;Institute of Microelectronics;Hebei University of Technology;
..............page:929-933
Study on Formation and Structure of Pores in P-Rich InP Single Crystals
Liu Zhiguo;Yang Ruixia;Yang Fan;Wang Yang;Wang Shujie;Sun Tongnian;Sun Niefeng;School of Information Engineering;Hebei University of Technology;Science and Technology on ASIC Laboratory;
Liu Zhiguo;Yang Ruixia;Yang Fan;Wang Yang;Wang Shujie;Sun Tongnian;Sun Niefeng;School of Information Engineering;Hebei University of Technology;Science and Technology on ASIC Laboratory;
..............page:934-937+954
Investigation of Basal Plane Dislocations in 4H-SiC Homogeneous Epitaxial Material
Li Jia;Yu Cui;Liu Qingbin;Lu Weili;Feng Zhihong;Yang Fei;Science and Technology on ASIC Laboratory;State Grid Smart Grid Research Institute;
Li Jia;Yu Cui;Liu Qingbin;Lu Weili;Feng Zhihong;Yang Fei;Science and Technology on ASIC Laboratory;State Grid Smart Grid Research Institute;
..............page:938-941
Novel Diagnostic and Prediction Method for Wire Bonding Faults in IGBT
Zhang Ying;Department of Electrical and Mechanical Engineering;Jiangsu Food & Pharmaceutical Science College;
Zhang Ying;Department of Electrical and Mechanical Engineering;Jiangsu Food & Pharmaceutical Science College;
..............page:942-945
Analysis of Life Evaluation Method of LED Light Source
Gao Jinhuan;Zhang Lei;Gao Zhaofeng;Huang Jie;Xu lisheng;The 13th Research Institute;CETC;Tianjin Railway Technical and Vocational College;
Gao Jinhuan;Zhang Lei;Gao Zhaofeng;Huang Jie;Xu lisheng;The 13th Research Institute;CETC;Tianjin Railway Technical and Vocational College;
..............page:946-948
Salt Spray Test of Transistor
Chen Chengju;Zhang Xiaoling;Zhao Li;Qi Haochun;Xie Xuesong;Lü Changzhi;School of Electronic Information and Control Engineering;Beijing University of Technology;
Chen Chengju;Zhang Xiaoling;Zhao Li;Qi Haochun;Xie Xuesong;Lü Changzhi;School of Electronic Information and Control Engineering;Beijing University of Technology;
..............page:949-954
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