1003-353X
2014 Issue 11
RF CMOS Front-End Mixer Circuit for the UHF RFID Reader
Lin Zhiheng;Tan Xi;Min Hao;ASIC & System State Key Laboratory;Fudan University;
Lin Zhiheng;Tan Xi;Min Hao;ASIC & System State Key Laboratory;Fudan University;
..............page:801-807+830
Design of the Ultrawide-Band Distributed Mixer Using 90 nm CMOS Technology
Xie Rengui;Wang Weibo;Tao Hongqi;Zhang Bin;Nanjing Electronic Devices Institute;
Xie Rengui;Wang Weibo;Tao Hongqi;Zhang Bin;Nanjing Electronic Devices Institute;
..............page:808-811+860
Application of the Localized Coupling Effect in the GaInP Solar Cell
Zuo Zhiyuan;Xia Wei;Wang Gang;Xu Xiangang;School of Physics and Engineering;Sun Yat-Sen University;INSPUR GROUP Shandong Inspur Huaguang Optoelectronics Co.;Ltd.;State Key Laboratory of Crystal Material;Shandong University;
Zuo Zhiyuan;Xia Wei;Wang Gang;Xu Xiangang;School of Physics and Engineering;Sun Yat-Sen University;INSPUR GROUP Shandong Inspur Huaguang Optoelectronics Co.;Ltd.;State Key Laboratory of Crystal Material;Shandong University;
..............page:812-816
..............page:816
Optimal Design of GaN-Based HEMT Devices
Feng Jiapeng;Zhao Hongdong;Sun Bo;Duan Lei;Guo Zhengze;Chen Jiemeng;Yao Yiyang;Tianjin Key Laboratory of Electronic Materials and Device;College of Information Engineering;Hebei University of Technology;The 13th Research Institute;CETC;
Feng Jiapeng;Zhao Hongdong;Sun Bo;Duan Lei;Guo Zhengze;Chen Jiemeng;Yao Yiyang;Tianjin Key Laboratory of Electronic Materials and Device;College of Information Engineering;Hebei University of Technology;The 13th Research Institute;CETC;
..............page:817-821
3300 V-10 A SiC Schottky Diodes
Ni Weijiang;Global Power Technology Co.;Ltd.;
Ni Weijiang;Global Power Technology Co.;Ltd.;
..............page:822-825+866
A 220 GHz Frequency Doubler Based on GaAs Planar Schottky-Barrier Diodes
Yang Dabao;Wang Junlong;Xing Dong;Liang Shixiong;Zhang Lisen;Feng Zhihong;The 13th Research Institute;CETC;Science and Technology on ASIC Laboratory;The 12th Research Institute;CETC;
Yang Dabao;Wang Junlong;Xing Dong;Liang Shixiong;Zhang Lisen;Feng Zhihong;The 13th Research Institute;CETC;Science and Technology on ASIC Laboratory;The 12th Research Institute;CETC;
..............page:826-830
Fabrication of Novel Structure Vertical-Cavity Surface-Emitting Laser
Feng Yuan;Liu Guojun;Hao Yongqin;Wang Yong;Yan Changling;Zhao Yingjie;Lu Peng;Li Yang;National Key Laboratory on High Power Semiconductor Lasers;Changchun University of Science and Technology;
Feng Yuan;Liu Guojun;Hao Yongqin;Wang Yong;Yan Changling;Zhao Yingjie;Lu Peng;Li Yang;National Key Laboratory on High Power Semiconductor Lasers;Changchun University of Science and Technology;
..............page:831-835
Effect of the Nitridation Duration on the Properties of AlN Thin Films Grown by Pulsed Laser Deposition
Liu Zuolian;Wang Haiyan;Yang Weijia;Wang Wenliang;Li Guoqiang;School of Material Science and Engineering;South China University of Technology;State Key Laboratory of Luminescent Materials and Devices;South China University of Technology;
Liu Zuolian;Wang Haiyan;Yang Weijia;Wang Wenliang;Li Guoqiang;School of Material Science and Engineering;South China University of Technology;State Key Laboratory of Luminescent Materials and Devices;South China University of Technology;
..............page:836-840+845
Effect of the Slurry in the Chemical Mechanical Polishing on the Surface Roughness of TiO2 Thin Films
Zhang Yufeng;Wang Shengli;Liu Yuling;Duan Bo;Li Ruojin;Du Xutao;Institute of Microelectronics;Hebei University of Technology;
Zhang Yufeng;Wang Shengli;Liu Yuling;Duan Bo;Li Ruojin;Du Xutao;Institute of Microelectronics;Hebei University of Technology;
..............page:841-845
Reliability of Ohmic Contact to n-GaAs with Pt Diffusion Barrier
Liu Dandan;Wang Yong;Ye Zhen;Gao Zhanqi;Zhang Yu;Wang Xiaohua;National Key Lab on High Power Semiconductor Lasers;Changchun University of Science and Technology;
Liu Dandan;Wang Yong;Ye Zhen;Gao Zhanqi;Zhang Yu;Wang Xiaohua;National Key Lab on High Power Semiconductor Lasers;Changchun University of Science and Technology;
..............page:846-849+877
Optimization of 40 nm Ultra Shallow Junction and pMOS Device Performance by Laser Spike Annealing
Zhang Dongming;Liu Wei;Zhang Peng;Shanghai Huali Microelectronics Corporation;
Zhang Dongming;Liu Wei;Zhang Peng;Shanghai Huali Microelectronics Corporation;
..............page:850-854
Effects of the Doping Concentration on the Low-Angle Grain Boundary in Heavy Boron Doped <111> Czochralski Silicon
Sun Xinli;Huang Xiaorong;Xu Yijun;Guo Bingjian;He Guojun;Lu Yan;Zu Guo;Zhejiang Sino Crystal Technology Co.;Ltd.;
Sun Xinli;Huang Xiaorong;Xu Yijun;Guo Bingjian;He Guojun;Lu Yan;Zu Guo;Zhejiang Sino Crystal Technology Co.;Ltd.;
..............page:855-860
Total Radiation Dose Effects of Different Structures nMOS Transistors
Yan Xuliang;Meng Liya;Yuan Xianghui;Huang Youshu;Lü Guolin;Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China;Chongqing University;
Yan Xuliang;Meng Liya;Yuan Xianghui;Huang Youshu;Lü Guolin;Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China;Chongqing University;
..............page:861-866
Effects of Measuring Parameters on the Photoluminescence of As-Doped ZnO Microwires
Zhang Heqiu;Jin Ye;Hu Lizhong;Wang Ruipu;Guo Cheng;Li Zeyu;School of Physics and Optoelectronic Technology;Dalian University of Technology;
Zhang Heqiu;Jin Ye;Hu Lizhong;Wang Ruipu;Guo Cheng;Li Zeyu;School of Physics and Optoelectronic Technology;Dalian University of Technology;
..............page:867-871+877
LED Junction Temperature Test Based on ANSYS Finite Element Analysis
Qi Qin;Qin Huibin;HuYongcai;CAE Station;Hangzhou Dianzi University;
Qi Qin;Qin Huibin;HuYongcai;CAE Station;Hangzhou Dianzi University;
..............page:872-877
..............page:878-879
..............page:880
..............page:880