1003-353X
2014 Issue 12
Research Progress of Surface Plasmon Enhanced Luminescence Efficiency of Ga N-Based LED
Liu Chunying;Miao Changyun;Liu Hongwei;Yang Hua;Li Xiaoyun;Niu Pingjuan;School of Electronics and Information Engineering;Tianjin Polytechnic University;
Liu Chunying;Miao Changyun;Liu Hongwei;Yang Hua;Li Xiaoyun;Niu Pingjuan;School of Electronics and Information Engineering;Tianjin Polytechnic University;
..............page:881-887
Design of the Frequency Synthesizer Integrated L-Band VCO
Lu Dongxu;Gao Bo;Wu Jie;Tian guoping;The 13th Research Institute;CETC;Jiangxi Vocational College of Mechanical & Electrical Technology;Science and Technology on ASIC Laboratory;
Lu Dongxu;Gao Bo;Wu Jie;Tian guoping;The 13th Research Institute;CETC;Jiangxi Vocational College of Mechanical & Electrical Technology;Science and Technology on ASIC Laboratory;
..............page:888-891+916
An Automatically Adjust Bias Circuit for the Low Noise Amplifier
Wang Wenjun;Ma lin;The 13th Research Institute CETC;
Wang Wenjun;Ma lin;The 13th Research Institute CETC;
..............page:892-896
Design of Low Power Current-Mode Interconnect Circuit
Fan Yue;Chen Shaochang;Yin Ming;College of Electronic Engineering;Naval University of Engineering;
Fan Yue;Chen Shaochang;Yin Ming;College of Electronic Engineering;Naval University of Engineering;
..............page:897-901
Simulation of the 150 V Charge Coupling Power MOSFET
Li Rui;Hu Dongqing;Jin Rui;Jia Yunpeng;Su Hongyuan;Kuang Yong;Qu Jing;College of Electronic Information and Control Engineering;Beijing University of Technology;New Electrial Materials and Microelectronics Institute;State Grid Smart Electrical Engineering;
Li Rui;Hu Dongqing;Jin Rui;Jia Yunpeng;Su Hongyuan;Kuang Yong;Qu Jing;College of Electronic Information and Control Engineering;Beijing University of Technology;New Electrial Materials and Microelectronics Institute;State Grid Smart Electrical Engineering;
..............page:902-907
Simulation of 600 V High Performance Novel Trench-Gate ITC-IGBT
Su Hongyuan;Hu Dongqing;Liu Yueyang;Jia Yunpeng;Li Rui;Kuang Yong;Qu Jing;College of Electronic Information and Control Engineering;Beijing University of Technology;New Electrical Materials and Microelectronics Institute;State Grid Smart Electrical Engineering;
Su Hongyuan;Hu Dongqing;Liu Yueyang;Jia Yunpeng;Li Rui;Kuang Yong;Qu Jing;College of Electronic Information and Control Engineering;Beijing University of Technology;New Electrical Materials and Microelectronics Institute;State Grid Smart Electrical Engineering;
..............page:908-916
..............page:916
Fabrication and Characterization of High Performance Al GaN/GaN HEMTs with Large Drain Current Density
Wang Li;Tan Xin;Lü Yuanjie;Information Center of Science and Technology;Science and Technology on ASIC Laboratory;
Wang Li;Tan Xin;Lü Yuanjie;Information Center of Science and Technology;Science and Technology on ASIC Laboratory;
..............page:917-920+925
Leadless Packaging High-Temperature Pressure Sensor
Tian Lei;Yin Yanzhao;Miao Xin;Wu Zuofei;The 49thResearch Institute;CETC;
Tian Lei;Yin Yanzhao;Miao Xin;Wu Zuofei;The 49thResearch Institute;CETC;
..............page:921-925
Research on Dislocation of SiC Crystal Grown by the PVT Using Wet Etching Technology
Zhang Hongyan;Liu Yunqing;Ning Min;Gao Yuqiang;Li Yongfeng;Wang Xijie;Zong Yanmin;SICC Co.;Ltd.;
Zhang Hongyan;Liu Yunqing;Ning Min;Gao Yuqiang;Li Yongfeng;Wang Xijie;Zong Yanmin;SICC Co.;Ltd.;
..............page:926-929+935
Flexible Piezoelectric Nanogenerator Based on PVDF-TrFE Film
Pi Zhaoyang;Zhang Jingwei;Wen Chenyu;Wu Dongping;State Key Laboratory of ASIC and System;Fudan University;
Pi Zhaoyang;Zhang Jingwei;Wen Chenyu;Wu Dongping;State Key Laboratory of ASIC and System;Fudan University;
..............page:930-935
..............page:935
Effects of Rare Earth Dy Doping on ZnO,CdO and SnO2 Thin Films
Han Fei;Li Jian;Yenching Institute of Technology;College of Electromechanical Engineering;Inner Mongolia University;College of Physical Science and Technology;
Han Fei;Li Jian;Yenching Institute of Technology;College of Electromechanical Engineering;Inner Mongolia University;College of Physical Science and Technology;
..............page:936-942
Improvement on Reverse Breakdown Characteristics of the Bipolar Switching Transistor by the Electron Irradiation
Chen Zuliang;Yue Wei;Li Zhaolong;Zhang Yuehong;Xie Yuying;Wu Huamei;Zhejiang Institute of Energy and Nuclear Technology Applications;Hangzhou Radiation Technology Development Company;
Chen Zuliang;Yue Wei;Li Zhaolong;Zhang Yuehong;Xie Yuying;Wu Huamei;Zhejiang Institute of Energy and Nuclear Technology Applications;Hangzhou Radiation Technology Development Company;
..............page:943-946
Module Thermal Analysis and Testing Based on the COHS Encapsulation Light Source
Shi Weizhao;Xi’an University of Technology;
Shi Weizhao;Xi’an University of Technology;
..............page:947-950
Ion Implantion and Annealing Equipment for SiC Power Device and the Process Certification
Li Maolin;Yang Bingjun;Shimizu S;Yokoo H;Tsukagoshi K;Komuro K;ULVAC Research Center Suzhou Co.;Ltd;ULVAC;Inc.;
Li Maolin;Yang Bingjun;Shimizu S;Yokoo H;Tsukagoshi K;Komuro K;ULVAC Research Center Suzhou Co.;Ltd;ULVAC;Inc.;
..............page:951-956
..............page:957-960