1003-353X
2014 Issue 2
Development of the GaN Power Switch Device and Microscale Power Conversion( Continued)
Zhao Zhengping;China Electronics Technology Group Corporation;
Zhao Zhengping;China Electronics Technology Group Corporation;
..............page:81-87
Design of an ASK Demodulator with High Sensitivity for the Ultra-High Frequency RFID Chip
Zhang Shengguang;Feng Peng;Yang Jianhong;Gu Yongsheng;Wu Nanjian;Zhao Baiqin;Institute of Microelectronics;School of Physical Science and Technology;Lanzhou University;State Key Laboratory for Super Lattices and Microstructures;Institute of Semiconductor;Chinese Academy of Sciences;Optoelectronics R&D Center;Institute of Semiconductor;Chinese Academy of Sciences;
Zhang Shengguang;Feng Peng;Yang Jianhong;Gu Yongsheng;Wu Nanjian;Zhao Baiqin;Institute of Microelectronics;School of Physical Science and Technology;Lanzhou University;State Key Laboratory for Super Lattices and Microstructures;Institute of Semiconductor;Chinese Academy of Sciences;Optoelectronics R&D Center;Institute of Semiconductor;Chinese Academy of Sciences;
..............page:88-92
A 12 bit Pipelined ADC with 4 bit MDAC
Pang Ruilong;Zhao Yiqiang;Yue Sen;Qin Guoxuan;School of Electronic Information Engineering;Tianjin University;
Pang Ruilong;Zhao Yiqiang;Yue Sen;Qin Guoxuan;School of Electronic Information Engineering;Tianjin University;
..............page:93-97+102
Design of an S-Band Balanced Limiter Amplifier
Deng Gang;Yao Zhihong;Chen Shubin;Su Yanwen;The 13th Research Institute;CETC;
Deng Gang;Yao Zhihong;Chen Shubin;Su Yanwen;The 13th Research Institute;CETC;
..............page:98-102
A 6-10 GHz Multi Function Chip Based on GaAs PHEMT
Xu Wei;Wu Hongjiang;Wei Hongtao;Zhou Xin;The 13th Research Institute;CETC;
Xu Wei;Wu Hongjiang;Wei Hongtao;Zhou Xin;The 13th Research Institute;CETC;
..............page:103-107
..............page:107
Schottky Barrier S /D Metal Oxide Semiconductor Field Effect Transistors with Ge /SiGe Heterostructure
Zhang Maotian;Liu Guanzhou;Li Cheng;Wang Chen;Huang Wei;Lai Hongkai;Chen Songyan;Department of Physics;Semiconductor Photonics Research Center;Xiamen University;
Zhang Maotian;Liu Guanzhou;Li Cheng;Wang Chen;Huang Wei;Lai Hongkai;Chen Songyan;Department of Physics;Semiconductor Photonics Research Center;Xiamen University;
..............page:108-113
..............page:113
Comparison and Analysis of Local Lifetime Control near IGBT’s Collector Junction
Zhou Xintian;Wu Yu;Hu Dongqing;Jia Yunpeng;Zhang Huihui;Mu Xin;Jin Rui;Liu Yueyang;College of Electronic Information and Control Engineering;Beijing University of Technology;Materials and Microelectronics Institute;State Grid Smart Electrical Engineering;
Zhou Xintian;Wu Yu;Hu Dongqing;Jia Yunpeng;Zhang Huihui;Mu Xin;Jin Rui;Liu Yueyang;College of Electronic Information and Control Engineering;Beijing University of Technology;Materials and Microelectronics Institute;State Grid Smart Electrical Engineering;
..............page:114-118+141
Effect of As Composition Gradient on Thermoelectric Characteristics of InP /InGaP /GaAsSb /InP Double Heterojunction Bipolar Transistor
Zhou Xingbao;Zhou Shouli;College of Information Engineering;Zhejiang University of Technology;National Space Science Center;Chinese Academy of Sciences;
Zhou Xingbao;Zhou Shouli;College of Information Engineering;Zhejiang University of Technology;National Space Science Center;Chinese Academy of Sciences;
..............page:119-123
Improvement of ISSG and Its Nitridation Process on the Performance of the Thin Gate Oxide
Zhang Hongwei;Gao Jianqin;Cao Yongfeng;Peng Shugen;Shanghai Huali Microelectronics Corporation;
Zhang Hongwei;Gao Jianqin;Cao Yongfeng;Peng Shugen;Shanghai Huali Microelectronics Corporation;
..............page:124-127+141
Ni /Pt and Ti /Pt Ohmic Contacts on n-Type 4H-SiC
Qin Long;Liu Yingkun;Yang Yong;Deng Jianguo;Hebei Semiconductor Research Institute;
Qin Long;Liu Yingkun;Yang Yong;Deng Jianguo;Hebei Semiconductor Research Institute;
..............page:128-131
Effects of Oxygen Partical Pressures on the Optical and Electrical Properties of IGZO Films Deposited by Magnetron Sputtering
Wu Haibo;Dong Chengyuan;Lin Shihong;Wu Juan;School of Electronic Information and Electrical Engineering;Shanghai Jiao Tong University;Infovision Optoelectronics Co.;Ltd.;
Wu Haibo;Dong Chengyuan;Lin Shihong;Wu Juan;School of Electronic Information and Electrical Engineering;Shanghai Jiao Tong University;Infovision Optoelectronics Co.;Ltd.;
..............page:132-136
Characteristics Improvement of Polymer Solar Cells by Adding NPB Modified Layers
Shen Zhili;Li Hairong;Liu Su;Pu Niannian;Ma Guofu;School of Physical Science & Technology;Lanzhou University;
Shen Zhili;Li Hairong;Liu Su;Pu Niannian;Ma Guofu;School of Physical Science & Technology;Lanzhou University;
..............page:137-141
Relation of FPGA Working Temperature Rise and the Program
Yue Yuan;Feng Shiwei;Guo Chunsheng;Shi Dong;Yan Xin;College of Electronic Information & Control Engineering;Beijing University of Technology;
Yue Yuan;Feng Shiwei;Guo Chunsheng;Shi Dong;Yan Xin;College of Electronic Information & Control Engineering;Beijing University of Technology;
..............page:142-146
Failure Mode of the IGBT Module Based on ANSYS
Dong Shaohua;Zhu Yangjun;Ding Xianpeng;Institute of Microelectronics;Chinese Academy of Sciences;School of Physics;Shandong University;
Dong Shaohua;Zhu Yangjun;Ding Xianpeng;Institute of Microelectronics;Chinese Academy of Sciences;School of Physics;Shandong University;
..............page:147-153+158
Performance and Stability on an Infrared LED for Security
Zheng Zhibin;Xiamen Hualian Electronics Co.;Ltd.;
Zheng Zhibin;Xiamen Hualian Electronics Co.;Ltd.;
..............page:154-158
..............page:159-160
..............page:161