Research Progress of GaN Single Crystal Growth with Liquid Phase Technique
Qi Chengjun;Wang Zaien;Jia Zhenyu;The 46th Research Institute;CETC;

..............page:161-167

Second Generation Linear Tunable Current Convey Based on Voltage Control Model
Song Shuxiang;He Xiaolian;Cen Mingcan;College of Electronic Engineering;Guangxi Normal University;

..............page:168-173

ying fei ling wei gan ying jia re ying yong tui chu xin yi dai ni dao igbt

..............page:173

maxim integrated tui chu cai yong hart xie yi de xin xing 4 20ma huan lu gong dian wen du bian song qi

..............page:173

Design of 6.5 GHz Phase-Locked Loop MMIC
Tang Xiaodong;Meng Zhipeng;The 13th Research Institute;CETC;

..............page:174-178+192

InP-Based HEMT Based on Ti/Pt/Au Ohmic Contact Metal System
Yu Zongguang;Li Haiou;Huang Wei;The 58th Research Institute;CETC;Guangxi Experiment Center of Information Science;Guilin University of Electronic Technology;

..............page:179-182+192

Reduction Technique of Inverse Piezoelectric Polarization Effect on AlGaN /GaN HFETs
Dai Wei;Wang Li;Zhang Zhiguo;Gao Xuebang;Wu Hongjiang;The 13th Research Institute;CETC;Science and Technology Message Reasearch Centre of GEHQ;

..............page:183-187

Improvement on on-State Characteristics of Fast Switching Thyristor
Liu Guohui;Tian Shi;Jinzhou Tianwei Electronics Co.;Ltd.;

..............page:188-192

ti gao liao 4g wang luo de tun tu liang he pin pu xiao lv

..............page:192

Gold Wire Ball Bonding Process Robust Parameters Optimization Based on RSM
Zhou Lin;Li Zhongyun;Institute of Electronic Engineering;China Academy of Engineering Physics;

..............page:193-198

microchip tui chu ji cheng 3 ge gao fen bian lv 16 wei pwm de 8 yin jiao feng zhuang xin qi jian

..............page:198

Analysis on Effect Factors and Mechanism of GaN Nanowire Growth
Wang Xinzhong;Yu Guanghui;Li Shiguo;Zhang Chunxiao;Shenzhen Institute of Information Technology;Shanghai Institute of Microsystem and Information Technology;Chinese Academy of Sciences;

..............page:199-203+209

Electrical Properties of TiN/AlN Composite Ceramic
Zhu Jiang;Li Chenhui;Liu Kai;Shi Yusheng;He Zhiyong;Zhang Qifu;State Key Laboratory of Material Processing and Die & Mould Technology;Huazhong Science and Technology University;China Iron & Steel Research Institute Group;

..............page:204-209

Critical Mechanical Problems of IC Packag Molding Process
Zhang Feng;Cao Yanggen;Yang Shanglei;Lu Meihua;Wang Guanghui;School of Material Engineering;Shanghai University of Engineering Science;Shanghai Eternal Information Technology CO.;LTD.;

..............page:210-213+219

Electrical Design of Ceramic Package for 3 GHz High Speed ADC
Zhang Hongshuo;Zhao Yuanfu;Yao Quanbin;Cao Yusheng;Lian Binhao;Zhu Guoliang;Beijing Microelectronics Technology Institute;Beijing;MX Tronics Corporation;

..............page:214-219

suo ding 2015 nian zhu liu yi dong yu xiao fei dian zi shi chang arm tui chu qiang hua ban ip tao jian xi lie chan pin

..............page:219

Impact of Crosstalk on Signal Integrity of High Density Ceramic Package for IC
Jiang Wei;Zheng Hongyu;Zhao Zujun;The 13th Research Institute;CETC;

..............page:220-225+232

Reliability of AlGaN/GaN High Electron Mobility Transistors
Feng Shiwei;Deng Bing;Zhang Yamin;Shi Lei;Guo Chunsheng;Zhu Hui;College of Electronic Information and Control Engineering;Beijing University of Technology;

..............page:226-232

Analysis of Doping Profile through Infra-Red Spectroscopic Ellipsometry
Sun Yanling;Wang Yuhui;Deng Jianguo;The 13th Research Institute;CETC;

..............page:233-237

bao li xie zuo huo pi fa bu semi guang fu cai liao guo ji biao zhun
lu wen feng ;

..............page:237

ke chuan dai she bei wei yuan hui (wdc) zheng shi cheng li ban ji she ji

..............page:238

di yi ci zheng wen tong zhi di shi er jie gu tai he ji cheng dian lu ji shu guo ji hui yi

..............page:239-240

wu xi hua run hua jing wei dian zi you xian gong si

..............page:241