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Semiconductor Technology
1003-353X
2014 Issue 9
Power Cell Optimum Design of the SiGe Power Amplifier for WLAN Applications
Ruan Ying;Chen Lei;Zhang Xianren;College of Electronics and Information Engineering;Shanghai University of Electric Power;Institute of Microelectronic Circuit and System;East China Normal University;
..............page:641-645
Design of a PFM Control Model High Efficient Fly-Back Converter
Zhao Chenguang;Feng Quanyuan;Wang Dan;Institute of Microelectronics;Southwest Jiaotong University;
..............page:646-650
A Low Power Implantable Neural Amplifier Based on Self-Cascaded Structures
Liu Xin;An Guanglei;School of Information Engineering;Chongqing City Management College;MSVLSI Laboratory;ECE Oklahoma State University;
..............page:651-655
Pixel-Level ADC Using Charge Reset Technique
Li Minzeng;Li Fule;Zhang Chun;Institute of Microelectronics;Tsinghua University;
..............page:656-660+665
Current-Voltage Characteristics of High Power 660 nm Laser Diodes
Zhu Zhen;Li Peixu;Zhang Xin;Wang Gang;Xu Xiangang;School of Physics and Engineering;Sun Yat-sen University;Shandong Huaguang Optoelectronics Co. Ltd.;State Key Laboratory of Crystal Material;Shandong University;
..............page:661-665
A Super Junction High-Voltage Schottky Barrier Diode
Gong Hong;Ma Kui;Fu Xinghua;Ding Zhao;Yang Fashun;People’s Armed College;Guizhou University;Key Lab of Micro-Nano-Electronics and Software of Guizhou Province;Guizhou University;
..............page:666-670
A Distributed Model for Fish-Bone Structure GaN HEMTs
Hu Zhifu;Cui Yuxing;Du Guangwei;Fang Jiaxing;Wu Jibin;Cai Shujun;Heibei Semiconductor Research Institute;Science and Technology on ASIC Laboratory;
..............page:671-673+698
Influence of Schottky Metal on the Electrical Characteristics of AlGaN /GaN Diodes
Qiu Xu;Lü Yuanjie;Wang Li;The 13th research Institute;CETC;Science and Technology on ASIC Laboratory;Information Center of Science and Technology;
..............page:674-678
A Nano-Scale GaAs HEMTs Electric Equation Including the Ballistic Transport Model
Zhu Zhaomin;Zhao Qingyun;Yu Baoqi;School of Internet of Things Engineering;Jiangnan University;
..............page:679-683
Process Optimization of Atomizing Slurry Applied CMP
Zhu Bing;Li Qingzhong;Wang Chen;The College of Mechanical Engineering;Jiangnan University;
..............page:684-688
Several Manufacturing Processes of the Super Junction VDMOS Drift Region
Ma Wanli;Zhao Shengzhe;Founder Microelectronics International Co.;Ltd.;
..............page:689-693+702
Effects of Terminated Faces of n-Type SiC on the Property of Ohmic Contacts
Wang Ling;Xu Mingsheng;Xu Xiangang;Shandong University;
..............page:694-698
Preparation and Property Analysis of ZnS∶ Mn /PVA Composite Nanofibers
Zhang Jingjing;Zhang Haiming;Yang Jinmei;Wang Xu;Wang Caixia;Qin Feifei;School of Science;Tianjin Polytechnic University;
..............page:699-702
Photoluminescence of 2DEG in AlGaN /AlN /GaN HEMT Structures
Tang Jian;Wang Xiaoliang;Xiao Hongling;School of Physics and Electronics;Yancheng Teachers University;Key Laboratory of Semiconductor Materials Science;Institute of Semiconductors;Chinese Academy of Sciences;
..............page:703-706
Effect of(100) Strain on the Optical and Electrical Properties of Cubic Ca2P0.25Si0.75
Cen Weifu;Yang Yinye;Fan Menghui;Yang Wenbang;Yao Juan;College of Science;Guizhou Minzu University;
..............page:707-713
Random Vibration Reliability Experiment and Finite Element Analysis for the SOP Package
Ren Chao;Zeng Chenhui;Shao Jiang;Wei Lai;Ding Jun;China Aero Poly-technology Establishment;
..............page:714-718