New Progress of the Microwave and Millimeter Wave GaN HEMT and MMIC
Zhao Zhengping;China Electronics Technology Group Corporation;Science and Technology on ASIC Laboratory;

..............page:1-7

5-12 GHz Multi-Function Transmit / Receive Chip Based on GaAs PHEMTs
Li Ming;Wu Hongjiang;Wei Hongtao;Han Qin;The 13th Research Institute;CETC;

..............page:8-11+62

Design of the Rail to Rail Voltage Comparator
Qiu Lingli;Liu Zhangfa;Electronic Information Engineering College;Beijing Jiaotong University;

..............page:12-18

Influences of Drain-to-Source Distance on the Characteristics of AlGaN / GaN HEMTs
Ma Ling;Lü Yuanjie;Wang Li;Song Xubo;Gu Guodong;Tan Xin;Guo Hongyu;The 13th Research Institute;CETC;Science and Technology on ASIC Laboratory;Information Center of Science and Technology;

..............page:19-23

Simulation of Reverse Biased ESD and Avalanche Ruggedness of Power Fast Recovery Diode
Qu Jing;Wu Yu;Liu Yueyang;Jia Yunpeng;Kuang Yong;Li Rui;Su Hongyuan;College of Electronic Information and Control Engineering;Beijing University of Technology;New Electrical Materials & Microelectronics Institute;State Grid Smart Electrical Engineering;

..............page:24-28

Simulation Characteristics of Graded Field Stop IGBT
Kuang Yong;Jia Yunpeng;Jin Rui;Wu Yu;Qu Jing;Su Hongyuan;Li Rui;College of Electronic Information and Control Engineering;Beijing University of Technology;New Eelectrical Materials & Microelectronics Institute;State Grid Smart Electrical Engineering;

..............page:29-33+43

P-Band Miniature 40 W Transmit Module Based on GaN HEMTs
Wu Jiafeng;Zhan Zhenhua;The 13th Research Institute;CETC;Representative Office of Air Force Resident in Shijiazhuang;

..............page:34-38

1310nm FP Semiconductor Laser Chip Suitable for the Low Cost Package
Zhang Shizu;Yuan Chunsheng;Che Xianghui;Zhou Xingchan;Zhang Kunwei;Zhang Xiaoguang;The 13th Research Institute;CETC;

..............page:39-43

A 0.8-4GHz Wideband Balanced Power Amplifier Based on GaN HEMTs
Lai Jinming;Luo Jia;You Liren;Yang Yu;Zhao Weixing;Peng Anjin;Southwest Institute of Electronic Equipment;The 13th Research Institute;CETC;

..............page:44-48+72

Improvement of the Interfacial Morphology of Ni_uPt_1-uSi_vGe_1-v/Si_0.72Ge_0.28
Yang Pengpeng;Zhang Qingzhu;Liu Qingbo;Wu Cinan;Yan Jiang;Xu Yefeng;College of Big Data and Information Engineering;Guizhou University;Key Laboratory of Microelectronic Devices & Integrated Technology;Institute of Microelectronics;Chinese Academy of Science;

..............page:49-52+67

Research and Fabrication of the n~+/p~+ Looping MOS Capacitors
Cui Jinhong;Zheng Yuning;Pan Guangran;Founder Microelectronics International Co.;Ltd.;

..............page:53-57

Effects of SAC105 Ni Doping Solder Ball on the Strength and Reliability of the Solder Joint
Zhang Shuhong;Tao Zichun;Mechanical and Electronic Engineering Department;Suzhou Institute of Industrial Technology;Fairchild Semiconductor Co.;Ltd.;

..............page:58-62

Characterization of the Interface Traps Energy Density Distribution of MOS / SOI Devices by the DCIV Technique
Zhao Hongli;Zeng Chuanbin;Liu Kuiyong;Liu Gang;Luo Jiajun;Han Zhengsheng;Institute of Microelectronics;Chinese Academy of Sciences;School of Physics;Liaoning University;

..............page:63-67

Research and Implementation of an IGBT Thermal Resistance Test System
Chen Jun;Zhang Xiaoling;Xie Xuesong;Tian Yunjie;Yuan Fang;Yang Youcai;College of Electronic Information and Control Engineering;Beijing University of Technology;

..............page:68-72

Failure Analysis of the Optical Beam Induced Resistance Change Based on Thermal Laser Stimulation Techniques
Chen Xuanlong;Liu Liyuan;Kuang Xianjun;Xu Guangning;Cui Shile;The 5th Electronics Research Institue;Ministry of Industry and Information Technology;State Key Laboratory of ASIC and System;Fudan University;

..............page:73-78

The IEEE 11^th International Conference on ASIC

..............page:79-80