1003-353X
2015 Issue 6
Surface Modification Technology of Silicon Quantum Dots
Zhang Yuheng;Pi Xiaodong;State Key Laboratory of Silicon Materials;School of Materials Science and Engineering;Zhejiang University;
Zhang Yuheng;Pi Xiaodong;State Key Laboratory of Silicon Materials;School of Materials Science and Engineering;Zhejiang University;
..............page:401-410
1.5×10-6/℃ High-Order Voltage Reference Curvature Compensating Circuit
Wang Xingjun;Shi Lingfeng;Institute of Electronic CAD;Xidian University;Electronics & Information Institute;Shaanxi Institute of Technology;
Wang Xingjun;Shi Lingfeng;Institute of Electronic CAD;Xidian University;Electronics & Information Institute;Shaanxi Institute of Technology;
..............page:411-416
Millimeters Wave GaN-Based HEMT Power MMIC
Song Jianbo;Fang Jiaxing;Cheng Zhiqun;Cui Yuxing;Zhang Lijiang;Fu Xingchang;Gao Xuebang;The 13th Research Institute;CETC;School of Electronic Information;Hangzhou Dianzi University;
Song Jianbo;Fang Jiaxing;Cheng Zhiqun;Cui Yuxing;Zhang Lijiang;Fu Xingchang;Gao Xuebang;The 13th Research Institute;CETC;School of Electronic Information;Hangzhou Dianzi University;
..............page:417-420+454
Design of a Low Power and Fully Integrated Frequency Synthesizer for the GNSS Receiver
Lu Dongxu;Gao Bo;Geng Shuangli;Tian Guoping;Gu Jiang;Ding Lixiang;Zhao Yongrui;The 13th Research Institute;CETC;Science and Technology on ASIC Laboratory;The 13th esearch Institute;CETC;
Lu Dongxu;Gao Bo;Geng Shuangli;Tian Guoping;Gu Jiang;Ding Lixiang;Zhao Yongrui;The 13th Research Institute;CETC;Science and Technology on ASIC Laboratory;The 13th esearch Institute;CETC;
..............page:421-425
Design of a Curvature Superposition Bandgap Voltage Reference with High Temperature Stability
Zhao Yongrui;Wu Hongjiang;Lu Dongxu;Tian Guoping;The 13th Research Institute;CETC;Science and Technology on ASIC Laboratory;
Zhao Yongrui;Wu Hongjiang;Lu Dongxu;Tian Guoping;The 13th Research Institute;CETC;Science and Technology on ASIC Laboratory;
..............page:426-430
..............page:430
Influence of SiN Passivation on the RF Characteristics of W-Band AlGaN/GaN HEMTs
Li Baodi;Lü Yuanjie;Cui Yuxing;Fu Xingchang;The 13th Research Institute;CETC;Science and Technology on ASIC Laboratory;
Li Baodi;Lü Yuanjie;Cui Yuxing;Fu Xingchang;The 13th Research Institute;CETC;Science and Technology on ASIC Laboratory;
..............page:431-435+454
Effect of FA/O Fine Polishing Slurry Components on the Removal Rate of Cu/Ta CMP
Hu Yi;He Yangang;Yue Hongwei;Liu Yuling;Chemical Engineering College;Xinjiang Normal University;Institute of Microelectronics;Hebei University of Technology;The 54th Research Institute;CETC;
Hu Yi;He Yangang;Yue Hongwei;Liu Yuling;Chemical Engineering College;Xinjiang Normal University;Institute of Microelectronics;Hebei University of Technology;The 54th Research Institute;CETC;
..............page:436-440+472
Influence of Crystalline Silicon Substrate Parameters on the Performances of the Back Contact Solar Cell
Zhou Tao;Lu Xiaodong;Zhang Peng;Xia Tingting;School of New Energy;Bohai University;
Zhou Tao;Lu Xiaodong;Zhang Peng;Xia Tingting;School of New Energy;Bohai University;
..............page:441-447+477
Nuclear Layer of InP Film Heteroepitaxy on Nano-Sphere Lithography Patterned GaAs Substrate
Qi Yongle;Zhang Ruiying;Zhang Zhen;Wang Yan Yan;Zhu Jian;Sun YuRun;Zhao Yongming;Dong Jianrong;Wang Shumin;Nano Science and Technology Institute;University of Science And Technology of China;Suzhou Institute of Nano-technology and Nano-Bionics;Chinese Academy of Sciences;State Key Laboratory of Functional Materials for Informatics;Shanghai Institute of Microsystem and Information Technology;Chinese Academy of Sciences;
Qi Yongle;Zhang Ruiying;Zhang Zhen;Wang Yan Yan;Zhu Jian;Sun YuRun;Zhao Yongming;Dong Jianrong;Wang Shumin;Nano Science and Technology Institute;University of Science And Technology of China;Suzhou Institute of Nano-technology and Nano-Bionics;Chinese Academy of Sciences;State Key Laboratory of Functional Materials for Informatics;Shanghai Institute of Microsystem and Information Technology;Chinese Academy of Sciences;
..............page:448-454
Package Level Failure and Failure Localization of the Integrated Circuit
Zhang Penghe;Chen Xuanlong;Liu Liyuan;Lin Daotan;He Shengzong;China Electric Power Research Institute;The 5th Electronics Research Institute;Ministry of Industry and Information Technology;
Zhang Penghe;Chen Xuanlong;Liu Liyuan;Lin Daotan;He Shengzong;China Electric Power Research Institute;The 5th Electronics Research Institute;Ministry of Industry and Information Technology;
..............page:455-459+477
Design of ESD Protection for GaAs Low Noise Amplifier
Dong Yimin;Li Zhiqiang;The 13th Research Institute;CETC;
Dong Yimin;Li Zhiqiang;The 13th Research Institute;CETC;
..............page:460-463
SEE and TID Effects on Cu_xSi_yO-Based Resistive Random Access Memory
Zhou Xiaoyu;Xue Xiaoyong;Yang Jianguo;Lin Yinyin;State Key Laboratory of ASIC and System;Fudan University;
Zhou Xiaoyu;Xue Xiaoyong;Yang Jianguo;Lin Yinyin;State Key Laboratory of ASIC and System;Fudan University;
..............page:464-467
Failure Analysis on the Latch-up Effect Caused by the Gate Oxide Damage
Liu Nan;Liu Dapeng;Zhang Hui;Zhu Weiming;NO. 808 Institute;Shanghai Academy of Spaceflight Technology;
Liu Nan;Liu Dapeng;Zhang Hui;Zhu Weiming;NO. 808 Institute;Shanghai Academy of Spaceflight Technology;
..............page:468-472
Establishment of Avalanche Photodiode Chip Auto Test System
Yang Hongwei;Zhang Yan;Qi Lifang;Yin Shunzheng;The 13th Research Institute;CETC;
Yang Hongwei;Zhang Yan;Qi Lifang;Yin Shunzheng;The 13th Research Institute;CETC;
..............page:473-477
..............page:478-479