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Semiconductor Technology
1003-353X
2016 Issue 1
New Progress in GaN High Frequency Switch Power Electronics
Zhao Zhengping;China Electronics Technology Group Corporation;Science and Technology on ASIC Laboratory;The 13thResearch Institute;CETC;
..............page:1-9
Research Progress of Methods to Reduce Contact Resistance Between Metal and n-Type Ge
Zhou Zhiwen;Shen Xiaoxia;Li Shiguo;School of Electronics and Communication College;Shenzhen Institute of Information Technology;
..............page:10-15+31
Low-Power Embedded Single-Poly Non-Volatile Memory for the RFID Tags
Yang Yanan;Yang Xiaolong;Chen Liying;School of Electronics and Information Engineering;Tianjin Polytechnic University;
..............page:16-21
A Fast-Transition Over-Thermal Protection Circuit
Zhang Zhuan;Cheng Xinhong;Yu Yuehui;Wang Kun;Engineering Center of Automotive Electronics;Shanghai Institute of Micro-System and Information Technology;Chinese Academy of Sciences;School of Physical Science and Technology;Shanghai Tech University;
..............page:22-26
2- 35 GHz Power Detector MMIC
Zhao Zirun;Yang Shi;The 13th Research Institute;CETC;
..............page:27-31
Design of the Chip of Temperature-Compensated Crystal Oscillator with High-Stability and Low Phase Noise
Li Ronglin;Li Minqiang;Bowei Integrated Circuits Co.;Ltd.;
..............page:32-36
Influence of Platinum Diffusion Electron Irradiation on Performance of FRDs
Zhao Bao;Jia Yunpeng;Wu Yu;Hu Dongqing;Zhou Xuan;Li Zhe;Tan Jian;College of Electronic Information and Control Engineering;Beijing University of Technology;
..............page:37-41
Main Contents of 2016
..............page:41
Effects of the H2O2-Based Alkaline Barrier Slurry on Co CMP
Pan Hui;Wang Shengli;Zhang Le;Wang Chenwei;Gao Jiaojiao;Institute of Microelectronics;Hebei University of Technology;
..............page:42-45+75
Contrast Research of VDMOS Junction Terminal Technology
Zhao Shengzhe;Li Li;Zhao Wenkui;Founder Microelectronics International Co.;Ltd.;
..............page:46-50
Improvement of Emission Efficiency of the Green LED by GaZnO Transparent Conductive Layer
Zhang Lili;Liu Zhanhui;Zhong Xia;Xiu Xiangqian;Zhang Rong;Xie Zili;School of Physics and Optoelectronic Engineering;Nanjing University of Information Science & Technology;Key Laboratory of Advanced Photonic and Electronic Materials;School of Electronic Science and Engineering;Nanjing University;
..............page:51-56+62
Study on the Energy Deposition in the Electron Beam Irradiated GaN-Based LED
Niu Pingjuan;Wu Yinglei;Yu Liyuan;Zhu Wenrui;Xue Weifang;School of Electronics and Information Engineering;Tianjin Polytechnic University;School of Electrical Engineering and Automation;Tianjin Polytechnic University;Engineering Research Center of High Power Solid State Lighting Application System;Ministry of Education;Tianjin Polytechnic University;
..............page:57-62
Defect Inspection Technologies for TSV Based 3D Integration
Chen Pengfei;Su Lei;Du Li;Liao Guanglan;Shi Tielin;State Key Laboratory of Digital Manufacturing Equipment and Technology;Huazhong University of Science and Technology;
..............page:63-69
Novel Non-Destructive IGBT Short-Circuit Tolerance Test Circuit
Huang Jianwei;Liu Guoyou;Yu Wei;Luo Haihui;Zhu Liheng;Qin Rongzhen;Zhuzhou CSR Times Electric Co.;Ltd.;State Key Laboratory of Novel Power Semiconductor Devices;
..............page:70-75
Transient Temperature Measurement of GaN HEMT Using Thermoreflectance Technique
Zhai Yuwei;Liang Faguo;Zheng Shiqi;Liu Yan;Li Yinghui;The 13th Research Institute;CETC;
..............page:76-80