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Semiconductor Technology
1003-353X
2016 Issue 6
Research Progress of Biochemical Reference Electrodes for Ion-Sensitive Field-Effect Transistors
Zhang Jingwei;Xu Ming;Zhao Dan;Zeng Ruixue;Wu Dongping;State Key Laboratory of ASIC and System;Fudan University;
..............page:401-410
Design of a Wideband Low Noise Amplifier Based on Genetic Algorithm
Wu Huicong;Li Bin;Institute of Information Science and Engineering;Hebei University of Science and Technology;The 54thResearch Institute;CETC;
..............page:411-415
Design of Off-Chip Capacitor-Free Low-Dropout Linear Regulator with High-Stability and Fast-Transient-Response
Xie Haiqing;Xiao Zheng;Tang Junlong;Zhou Binteng;Zeng Chengwei;Chen Xixian;School of Physics & Electronic Science;Changsha University of Science & Technology;
..............page:416-420
Design of an X-Band Low Phase Noise VCO Based on InGaP/GaAs HBT Process
Chen Juntao;Li Shifeng;The 13th Research Institute;CETC;
..............page:421-424
Design of a 6-18 GHz Broadband Driver Amplifier
Li Yuanpeng;Zhao Bingzhong;Wei Hongtao;Liu Yongqiang;The 13th Research Institute;CETC;Bohai Petroleum Volational College;
..............page:425-428+480
A Low Jitter Receiver for Serial Links Based on Phase Interpolator
Lü Junsheng;Shao Gang;Tian Ze;Aeronautics Technology Key Lab of Integrated Circuit and Micro-System;Xi’an Aeronautics Computing Technique Research Institute;AVIC;
..............page:429-434
2-18 GHz 10 W GaN HEMT Non-Uniform Distributed Power Amplifier
Feng Wei;Liu Shuai;Zhang Bin;The 13thResearch Institute;CETC;
..............page:435-439
Dynamic Electro-Thermal Simulation Model of Inverter IGBT Power Module
Yao Fang;Wang Shaojie;Li Zhigang;School of Electrical Engineering;Hebei University of Technology;
..............page:440-445+472
Large-Signal Model of GaAs HEMT Switch Device
Liu Yanan;Du Guangwei;Hu Zhifu;Sun Xiguo;Cui Yuxing;The 13th Research Institute;CETC;
..............page:446-450+480
L-Band Wide Pulsed and Large Duty Cycles Internal Matched 500 W GaN HEMT Device
Wu Jiasheng;Xu Shouli;Liu Yingkun;Liu Xiubo;The 13th Research Institute;CETC;
..............page:451-455+466
Adjustment of NiSi/Si Schottky Barrier Height Using Microwave Annealing
Zhou Xiangbiao;Xu Peng;Fu Chaochao;Wu Dongping;State Key Laboratory of ASIC and System;Fudan University;
..............page:456-460
Molecular Beam Epitaxy of ZnSeTe Films
Ren Jingchuan;Liu Chao;Cui Lijie;Zeng Yiping;Key Laboratory of Semiconductor Materials Science;Institute of Semiconductors;Chinese Academy of Sciences;
..............page:461-466
Magnetron Sputtering ZnO Thin Films and Its Microstructure and Photoelectric Properties
Song Congzheng;Chen Junfang;Zhang Youpeng;Wang Yan;Xiong Wenwen;Institute of Physics and Telecommunication Engineering;South China Normal University;
..............page:467-472
Accelerating Lifetime Test Method of the High Power Semiconductor Laser Diode Array
Wang Tianzhi;Zhong Li;China Electronics Standardization Institute;Institute of Semiconductors;Chinese Academy of Sciences;
..............page:473-480