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Semiconductor Technology
1003-353X
2016 Issue 8
Research Progress on Graphene-Based Field Effect Transistors
Wang Cong;Liu Yurong;Department of Electronic Information;Shanwei Polytechnic;Guangdong Research and Development Center for Optoelectronic Engineering Technology;School of Physics and Optoelectronics;South China University of Technology;School of Electronics and Information;South China University of Technology;
..............page:561-569+579
A High-Speed Sense Amplifier for Flash Memory
Guo Jiarong;Ran Feng;School of Electronics and Information;Shanghai Dianji University;School of Mechatronic Engineering and Automation;Shanghai University;
..............page:570-574
Full-Custom Layout Design of 14 bit 250 MS/s Charge Domain Pipelined ADC
Zhang Ganying;Chen Zhenhai;Wei Jinghe;Yu Zongguang;The 58th Research Institute;CETC;School of Information Engineering;Huangshan University;
..............page:575-579
A Microminiature DC-18 GHz MMIC 6 bit Digital Attenuator
Xie Yuanyuan;Chen Fengxia;Gao Xuebang;The 13th Research Institute;CETC;
..............page:580-585
Design of a New Microwave Wideband Voltage Controlled Oscillator
Sun Gaoyong;Yao Zhihong;Guo Wensheng;Zhang Jiacheng;The 13th Research Institute;CETC;
..............page:586-589+635
Design of the Ka-Band High Isolation Single-Pole Single-Throw Switch
Zhou Yongtao;Fan Shoutao;Xu Chunliang;Wei Shaoren;Beijing Institute of Remote Sensing Equipment;The 13th Research Institute;CETC;
..............page:590-594
Fabrication of the Analog Predistortion Power Amplifier
Zhu Feng;Fang Jiaxing;Wu Hongjiang;Hao Chaohui;The 13th Research Institute;CETC;Academy of Armored Force Engineering;
..............page:595-598+614
Study of Terahertz InP HEMT Device
Liu Yanan;Du Guangwei;Hu Zhifu;Sun Xiguo;Cui Yuxing;The 13th Research Institute;CETC;
..............page:599-603+609
Electrothermal Physical Model of Millimeter Wave AlGaN/GaN HEMTs
He Fang;Dong Ruoyan;Xu Yuehang;Chengdu Yaguang Electronics Co.;Ltd.;EHF Laboratory of Fundamental Science for National Defense;University of Electronic Science and Technology of China;
..............page:604-609
4 Inch Silicon-Substrate GaN Light-Emitting Diodes
Yuan Fengpo;Liu Bo;Yin Jiayun;Wang Bo;Wang Jinghui;Tang Jingting;The 13th Research Institute;CETC;
..............page:610-614
Influence of Different p H Regulators on the Sapphire Substrate CMP
Wang Jianchao;Niu Xinhuan;Li Ruiqi;Zhao Xin;School of Electronic Information Engineering;Hebei University of Technology;Tianjin Key Laboratory of Electronic Materials and Devices;
..............page:615-619
Cleaning Methods of InP Wafers for Epi-Growth
Wu Yongchao;Lin Jian;Liu Chunxiang;Wang Yunbiao;Zhao Quan;The 46th Research Institute;CETC;
..............page:620-624
Key Technology of 1T’-MoTe2 In-Situ Growth
Xiong Siwei;Sun Qingqing;State Key Laboratory of ASIC and System;Fudan University;
..............page:625-630
Thermal Dissipation Analysis and Verification of a Novel Packaging Material
Liu Linjie;Cui Zhaotan;Gao Ling;The 13th Research Institute;CETC;Hebei Sinopack Electronic Co.;Ltd.;
..............page:631-635
Degradation Law and Degradation Mechanisms of AlGaN/GaN HEMTs Under Different Temperatures
Guo Chunsheng;Ren Yunxiang;Gao Li;Feng Shiwei;Li Shiwei;College of Electronic Information and Control Engineering;Beijing University of Technology;China Electronics Standardization Institute;
..............page:636-639