Research Progress of the Hole-Transport Material-Free Layer Perovskite Solar Cells
Liu Yunyan;Zhao Dong;Wei Gongxiang;Sun Yan;School of Science;Shandong University of Technology;

..............page:641-648+699

Analysis Methods of the Traps in the Buffer Layer in AlGaN/GaN Power Devices
Deng Xiaoshe;Liang Yanan;Jia Lifang;Fan Zhongchao;He Zhi;Zhang Yun;Zhang Dacheng;School of Software and Microelectronics;Peking University;Semiconductor Research Institute;Chinese Academy of Sciences;

..............page:649-657

Digital Data Trimming Circuit Design for ATCXO
Dong Zimiao;Liang Ke;Lin Changlong;Li Guofeng;IC Design and System Integration Laboratory;College of Electronic Information and Optical Engineering;Nankai University;

..............page:658-663

Design of a New Low-Phase-Noise Low-Power Colpitts QVCO
Li Xiangmin;Jia Liang;Kang Zhuang;Yangtze University College of Arts and Sciences;School of Microelectronics and Solid-State Electronics;University of Electronic Science and Technology of China;

..............page:664-668

Design and Implementation of X-Band Large Bit High-Low Pass Phase Shifter MMICs
Wang Qi;Sun Pengpeng;Zhang Rong;Geng Miao;Liu Hui;Luo Weijun;Institute of Microelectronics;Chinese Academy of Sciences;

..............page:669-673

Design and Implementation of a High Voltage and High Speed GaN FET Switch Driver
Wang Ziqing;Liao Bin;The 13thResearch Institute;CETC;

..............page:674-678

A Novel Structure of Anode-Shorted IGBT with p-Barrier Layer
Yu Jiahong;Li Hanyue;Xie Gang;Wang Liumin;Jin Rui;Sheng Kuang;College of Electrical Engineering;Zhejiang University;Electrical Engineering;New Material and Microelectronics Department;State Grid Smart Grid Research Institute;

..............page:679-683

Effect of Hole Buffer Layer V₂O₅ on Performances of Green Phosphorescent OLED
Du Shuai;Zhang Fanghui;College of Science;Shaanxi University of Science and Technology;

..............page:684-689

3d wei feng zhuang she pin / wei bo mo kuai
zhou biao ;

..............page:689

Ni/4H-SiC Ohmic Contact Formed by Laser Annealing
Liu Min;He Zhi;Niu Yingxi;Wang Xiaofeng;Yang Fei;Yang Fuhua;Institute of Semiconductors;Chinese Academy of Sciences;Power Semiconductors Department;Global Energy Interconnection Research Institute;

..............page:690-694

Bubbling Transfer of CVD Graphene Using Encapsulated Air Gavity as Stopping Layer
Huang Yang;Deng Shigui;Guo Weiling;Sun Jie;College of Electronic Information and Control Engineering;Beijing University of Technology;Department of Microtechnology and Nanoscience;Chalmers University of Technology;

..............page:695-699

A Fast TSV Filling Technology Based on Surface Tension
Liu Bingjie;Gu Jiebin;Yang Heng;School of Mechatronic Engineering and Automation;Shanghai University;State Key Laboratory of Transducer Technology;Shanghai Institute of Microsystem and Information Technology;Chinese Academy of Sciences;

..............page:700-705

IC Function Verification Platform Based on GUI and PXI Bus
Feng Yang;Yu Zhiguo;Sun Yizhou;Gu Xiaofeng;Department of Electronic Engineering;Jiangnan University;Engineering Research Center of Io T Technology Applications;

..............page:706-710

Life Prediction Model of the Low Power LED Based on SVM Optimized by ISFLA
Cui Kenan;Zhang Zhipeng;Zhu Tong;Tang Puying;Liu Shuang;School of Optoelectronic Information;University of Electronic Science and Technology of China;

..............page:711-715+720

Characterization Analysis of Deep Level in In GaN/GaN Multiquntum Well
Liu Jianming;San’an Optoelectronics Co.;Ltd.;

..............page:716-720