A new local-world evolving network model
Qin Sen a) and Dai Guan-Zhonga) School of Science;Hangzhou Dianzi University;Hangzhou 310018;China b) School of Automation;Northwestern Polytechnical University;Xi’an 710072;China
..............page:383-390
..............page:391-394
..............page:395-399
..............page:400-404
..............page:405-410
..............page:411-417
..............page:418-425
..............page:426-429
..............page:430-434
..............page:435-439
..............page:440-445
The influence of electric field on a parabolic quantum dot qubit
Yin Ji-Wena);Xiao Jing-Lin b);Yu Yi-Fu a);and Wang Zi-Wu a) a) Department of Physic and Electronic Information Engineering;Chifeng College;Chifeng 024000;China b) College of Physics and Electronic Information Inner Mongolia Normal University;Tongliao 028043;China
..............page:446-450
..............page:451-456
..............page:457-461
..............page:462-467
..............page:468-474
..............page:475-481
..............page:482-488
..............page:489-500
Electronic transmission of three-terminal pyrene molecular bridge
Wang Li-Guanga);Zhang Xiu-Mei a);Terence Kin Shun Wong b);Katsunori Tagami c);and Masaru Tsukada c) a) School of Science;Jiangnan University;Wuxi 214122;China b) School of Electrical and Electronic Engineering;Nanyang Technological University;639798;Singapore c) Nano Technology Research Centre;Waseda University;Tokyo 162-00041;Japan
..............page:501-505
..............page:506-515
..............page:516-521
..............page:522-530
..............page:531-536
..............page:537-541
..............page:542-548
..............page:549-552
..............page:553-557
..............page:558-564
..............page:565-570
..............page:571-580
..............page:581-587
..............page:588-592
..............page:593-596
..............page:597-603
..............page:604-610
..............page:611-615
..............page:616-623
..............page:624-629
..............page:630-635
..............page:636-645
..............page:646-651
..............page:652-657
..............page:658-663
Fast pore etching on high resistivity n-type silicon via photoelectrochemistry
Bao Xiao-Qinga)b);Ge Dao-Han a)b);Zhang Sheng a)b);Li Jin-Penga)b);Zhou Ping a);Jiao Ji-Wei a);and Wang Yue-Lin a) a) State Key Laboratories of Transducer Technology;National Key Laboratories of Microsystem Technology;Shanghai Institute of Microsystem and Information;Chinese Academy of Sciences;Shanghai 200050;China b) Graduate School of Chinese Academy of Sciences;Beijing 100049;China
..............page:664-670
Three-dimensional interfacial wave theory of dendritic growth: (Ⅰ). multiple variables expansion solutions
Chen Yong-Qiang a)b);Tang Xiong-Xin a)c);and Xu Jian-Jun a)d) a) School of Mathematical Science;Nankai University;Tianjin 300071;China b) Department of Fundamental Subject;Tianjin Institute of Urban Construction;Tianjin 300384;China c) School of materials Science and Engineering;University of Science and Technology Beijing;Beijing 100083;China d) Department of mathematics and Statistics;McGill University;H3A2K6 Montreal;Canada
..............page:671-685
..............page:686-698
..............page:699-703
..............page:704-708
..............page:709-714
..............page:715-725
..............page:726-733
..............page:734-737
..............page:738-743
..............page:744-748
..............page:749-756
..............page:757-762
..............page:763-767
..............page:768-772
..............page:773-777
..............page:778-782
..............page:783-789
Thermally activated magnetization reversal in magnetic tunnel junctions
Zhou Guang-Hong a)b);Wang Yin-Ganga);Qi Xian-Jin a);Li Zi-Quan a);and Chen Jian-Kang a) a) School of Materials Science and Technology;Nanjing University of Aeronautics and Astronautics;Nanjing 210016;China b) Department of Mechanical Engineering;Huaiyin Institute of Technology;Huaian 223003;China
..............page:790-794
Lateral-field-excitation properties of LiNbO3 single crystal
Wang Wen-Yan a);Zhang Chaob);Zhang Zhi-Tian a);Liu Yan b);and Feng Guan-Pinga)b) a) Department of Precision Instruments and Mechanology;Tsinghua University;Beijing 100084;China b) Center for Information and Optomechatronics;Research Institute of Tsinghua University in Shenzhen;Shenzhen 518057;China
..............page:795-802
Structure, ferroelectric and dielectric properties of Bi2 WO6 with different bismuth content
Wang Xiao-Juan a)b);Gong Zhi-Qiang b)c);Zhu Jun b);and Chen Xiao-Bing b) a) College of Physics and Electronic Engineering;Changshu Institute of Technology;Changshu 215500;China b) College of Physics Science and Technology;Yangzhou University;Yangzhou 225002;China c) Laboratory for Climate Studies;National Climate Center;China Meteorological Administration;Beijing 100081;China
..............page:803-809
..............page:810-814
..............page:815-820
..............page:821-824
..............page:825-844