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Semiconductor Information
1001-5507
2000 Issue 4
Realization of I/Q Quadrature Phase Demodulator in L Band
sun yaoxian (teaching and researching section of electrical engineering of 86004 unit; baoding 071051) zhang yuping (the 13th electronic research institute; shijiazhuang 050051)
..............page:52-54
Large-Signal Modeling of MESFETs and PHEMTs
gao xuebang (the 13th electronic research institute; shijiazhuang 050051)
..............page:44-51
Millimetr-Wave Doubler Upconverter and Power Amplifier Assembly
he qingguo; sun jing (hebei semiconductor research institute; shijiazhuang 050051)
..............page:55-57
Principle and Repairing of JB Serial Mask Aligner
shang xiuhong (the 13th electronic research institute; shijiazhuang 050051)
..............page:58-62
Study on the Ball Grid Array Packaging
li xiuqing; ge xinxia (the 13th electronic research institute; shijiazhuang 050051)
..............page:18-22,26
Application of a Set of Standard Wafers for Mapping Sheet Resistance in Manufacturing of IC
zhou quande (shanghai institute of measurement and testing technology; shanghai 200233)
..............page:38-40,51
duo mo guang xian he dan mo guang xian de kai fa
li xiu qing
..............page:64
gan hemt wei bo qi jian yan jiu xin jin zhan
zeng qing ming
..............page:62-63
Research on the Method of Building up ASIC Cell Library
yu zongguang; shao jinrong; he xiaowa (wuxi microelectronics institute; wuxi 214035)
..............page:1-4,13
The Selective Etching Technology in GaAs-Based and InP-Based HFET
li xiaobai (the national key laboratory of asic.; shijiazhuang 050051)
..............page:5-13
Ultrahigh-Peak and Average Power femto Second Laser
jia zhenggen (nanjing electronic devices institute; nanjing 210016)
..............page:23-26
Study on the Photo Sensitivity of SI GaAs and MESFET
guo xiaobing; zhou zhihui; hu kaisheng (the 46th electronic research institute; tianjin 300192) zhang mian (the 13th electronic research institute; shijiazhuang 050051)
..............page:41-43
Solution for Breakdown Voltage for Asymmetric Linearly Graded Junction
he jin; zhang xing; huang ru (institute of microelectronics; beijing university; beijing 100871)
..............page:34-37,54
Requirment of Semiconductor Techonology for Solid State Radar
li jing (the 13th electronic research institute; shijiazhuang 050051)
..............page:27-33