The decade of the compound semiconductor
liu lei (the 13th electronic research institute; shijiazhuang 050051; china) hu xiao-lan (the 41th electronic research institute; qingdao 266000; china)

..............page:21-24

guo jia ban dao ti qi jian zhi liang jian du jian yan zhong xin tong guo guo jia san he yi ping shen

..............page:60-61

Microelectronics packaging marching towards the new century
gao shang-tong (hebei semiconductor research institute; shijiazhuang 050051; china)

..............page:1-7

Improvement of SiGe HBT technology
liu zhi-nong; qian pei-xin; chen pei-yi (institute of microelectronics; tsinghua university; beijing 100084; china)

..............page:8-14,20

dian zi 202 ji liang zhan shun li tong guo guo fang ji liang ren ke fu cha
ren dong feng

..............page:54

gui qiu ji cheng dian lu xin tu po
zi yin ; zhou jie

..............page:60

Improving the reliability of internal matching capacitor in S-band high power transistor
pan hong-shu; pan ru; yao su-xia; liang shi-ling; su li-juan (hebei semiconductor research institute; shijiazhuang 050002; china)

..............page:43-45

Study on device applications of SiGeC ternary alloy
wang ya-dong; wang long-cheng; ye zhi-zhen; huang jing-yun (state key laboratory of si materials; zhejiang university; hangzhou 310027; china)

..............page:55-59

Status and development trend of semiconductor quantum-wires field-effective transistors
yan fa-wang; zhang wen-jun; zhang rong-gui (the 13th electronic research institute; shijiazhuang 050051; china)

..............page:25-28

Integrated gate commutated thyristor
wang cai-lin; an tao; li fu-de (xi an university of technology; xi an 710048; china)

..............page:29-34

1999 nian shi da asic gong ying shang
jiang chang ling

..............page:62

Study of hydrogen in silicon
fan rui-xin; yang de-ren; ma xiang-yang; que duan-lin (state key laboratory of silicon material science; zhejiang university; hangzhou 310027; china)

..............page:46-49,54

Development and the prospect of SOI CMOS
cheng ying (the 13th electronic research institute; shijiazhuang 050051; china)

..............page:15-20

Deep sub-micron synchrotron radiation x-ray lithography technique
xie chang-qing; ye tian-chun; chen da-peng; zhao ling-li; xu xing-cai (microelectronics r&d center; chinese academy sinica; beijing 100010; china)

..............page:35-37,42

AlGaInP epitaxial materials for high bright LED with red,orange and yellow color
guan xing-guo; yan zhen-bin; liu hui-sheng; lu hong-xi; li zhi-qiang; li ai-gong (huineng power electronics co.; ltd.; shijiazhuang 050051; china)

..............page:50-54

Challenges for the development of 100nm technology
fu shi-ping; peng guan-zhong (the 13th electronic research institute; shijiazhuang 050051; china)

..............page:38-42