xing ye dong tai

..............page:11-22,27-61,64-65

Study on the relation between sidegating effect and the distance of side-gate/MESFET of GaAs MESFETs
ding gan; cui li juan (liuwang middle school of jiaonan shandong; qingdao 260000; china) ding yong; mao you de (hefei university of technology; hefei 230009; china) zhao fu chuan; xia guan qun (shanghai institute of metallurgy chinese academy of scie

..............page:58-61

jia su ji shu chuang xin man zu gong cheng ji xu shi san suo wu shi xiang cheng guo tong guo zhuan jia jian ding

..............page:1

Application of SIMS in GaAs process
ma nong nong; han xiang ming (the 46th electronic research institute; quality inspection centre; tianjin 300192; china)

..............page:28-32,41

Analytical solutions for breakdown voltage and electric field distribution along junction edge for planar abrupt junction
he jin (misroelectronic institute; beijing university; beijing 100871; china)

..............page:54-57

rf/ wei bo ye chang yong jian xie ji suo xie ( yi )
jiang chang ling ; zhao xiao ning

..............page:62-63

Development and prospect of semiconductor materials
zhou li jun (the 13th electronic research institute; shijiazhuang 050051; china)

..............page:12-15

Power semiconductor module and its technology
wu ji jun; wu li li (xi an power electronics research institute; xi an 710061; china)

..............page:23-27

Design technologies of large area science CCD images
chen yi fei (hebei semiconductor research institute; shijiazhuang 050051; china)

..............page:33-41

Subdivided circuit is fulfilled in a PLD chip EPM7128LS84
wang yan fang; wang xiao ping; fan jin sheng; liu yu hong (department of electronic engineering; shijiazhuang railway institute; shijiazhuang 050043; china)

..............page:44-47

Temperature characteristic of transistors and problems on practical use
wang jun (shen ai semiconductor company; shenzhen 518000; china)

..............page:52-53,61

Integrated circuits technology for telecommunication in the 21st century
wei shao jun (the microelectronics institute; tsinghua university; beijing 100081; china)

..............page:8-11

Development of linear power amplifier for communication
li hao mo (the 13th electronic research institute; shijiazhuang 050051; china)

..............page:5-7

World-width is the development trend of integrated circuit card
lin wan xiao (yongxing electron company; xindu 610500; china)

..............page:16-18

Challenges and opportunities in billion-transistor system-on-a-chip integration
yang hua zhong; 2hou chao huan; 1wang hui 1(department of electronic engineering; tsinghua university; beijing 100084; china) 2(institute of acoustics; chinese academy of sciences; beijing 100080; china)

..............page:2-4

A Miniature QPSK modulator and amplifier module
wang jiang; wang yi min (the 13th electronic research institute; shijiazhuang 050051; china)

..............page:42-43,47

Study on threshold voltage uniformith of GaAs MESFET fabricated in different process
li chuan hai; mao you de; ding yong (hefei university of technology; science college; hefei 230009; china) liu ru ping; xia guan qun (shanghai insitute of metallurgy; solid state device and system laboratory; shanghai 200050; china)

..............page:48-51

Summarization about single-chip microprocessor development system
ju shui rong (mos design institute of wuxi huajing semico microelectronics co.; ltd.; wuxi 214061; china)

..............page:19-22