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Semiconductor Information
1001-5507
2001 Issue 2
Analog/mixed-signal HDLs application and development
li peng; yao li zhen (research inst.microelectronics; xidian university; xi an 710071; china)
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page:7-11
Co-development of market and technology of MEMS
tian wen bin (the 13th electronic research institute; shijiazhuang 050051; china)
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page:12-14
SiC materials and devices
yuan ming wen (hebei semiconductor research institute; national key laboratory of asic; shijiazhuang 050051; china)
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page:1-6
Microcontroller and its developing tendency
ju shui rong (mos design institute of wuxi huajing semico microelectronics co.; ltd.; wuxi 214061; china)
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page:15-18
New optical technique
jia zheng gen (nanjing electron device institute; nanjing 210016; china)
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page:24-25
Current gain β of vertical transistor in BiCMOS technology and SPC in a broad sense
bao rong sheng (shanghai belling microelectronics mfg.corp.ltd; shanghai 200233; china)
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page:31-36
Radiation-hardened technologies of microelectronic devices
he jun (the 13th electronic research institute; shijiazhuang 050051; china)
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page:19-23,30
Progress in the manufacturing technology of silicon on insulator
zhang yong hua; peng jun; huang yun xia (research ins.of microelectronics; xidian univ.; xi an 710071; china)
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page:26-30
Development of ZnO thin film doping and transition
chen han hong; ye zhi zhen (state key laboratory of silicon material; zhejiang university; hangzhou 310027; china)
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page:37-39
Application of monolithic switch power
zhang shu xia (the 13th electronic research institute; shijiazhuang 050051; china)
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page:43-45
Relation of heterojunction structure of Si/Si_(1-x)Ge_x HEMT and 2DEG density
hu ying; zhou xiao hua; xu yu long; zhao zu jun (department of technology physics; xidian university; xi an 710071; china)
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page:46-49
157nm guang ke ji shu tu fei meng jin
liu xiao zuo
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page:36
Highly reliable high voltage transistors by use of the SIPOS passivation technology
wang jun; yang xiao zhi (shenai semiconductor co.; ltd; shenzhen 518000; china)
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page:40-42
rf/ wei bo ye chang yong jian xie ji suo xie ( er )
jiang chang ling ; zhao xiao ning
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page:56-57
Research of thyristor's transient thermal impedance and junction temperature rise
li jiao ming; yu yue hui; bai tei cheng; peng zhao lian (department of electronic science and technology; huazhong university of science and technology; wuhan 430074; china)
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page:52-55
Analytic solution of 2DEG energy level with parabolic well
ding kou bao (dept.of inform.and electron.engineering; state key labortory of silicon material; zhejiang university; hangzhou 310028; china)
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page:50-51
gan sheng chang gong yi de dao gai shan
liu xiao zuo
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page:58
lucent xiang aoi ti gong liang zi ji lian ji guang qi
liu xiao zuo
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page:58-59
2000 nian ban dao ti xing ye de ding ji sheng chan shang
liu xiao zuo
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page:60-61
shou ji shi chang ji zeng
li yu sheng
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page:61
liang zi ji suan cheng xu de fa zhan
liu xiao zuo
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page:59-60
celestica yu nec gong si fa zhan shang wu guan xi
tian hui juan
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page:58
feng wo dian hua zeng chang ci ji s-csp feng zhuang de xu qiu
li yu sheng
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page:59
2005 nian jia yong wang luo shi chang shou ru ke da 24 yi mei yuan
tian hui juan
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page:60
zhong guo guo ji mao yi cu jin wei yuan hui dian zi xin xi xing ye fen hui 2001 2002 zhan lan ji hua
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page:62-63