RF deviced and circuits for wireless systems
li he-wei (the 13th electronic research institute; shijiazhuang 050051; china) zhang li-juan (hebei electronic school; shijiazhuang 050061; china)

..............page:9-15

Semiconductor quantum wire material
zhang chen (the 46th electronic research institute; tianjin 300192; china) zhao xiao-ning (the 13th electronic research institute; shijiazhuang 050051; china)

..............page:24-26

X ray pulse peneration by femto second laser
jia zheng-gen (nanjing electron device institute; nanjing 210016; china)

..............page:21-23,45

Expression of the area density of free carrier in Q2D semiconductors
luo zhen-hua (department of physics; east cina normal university; shanghai 200062; china) wu zhong-chi (department of physics; fudan university; shanghai 200433; china)

..............page:52-55

C-band high-reliable satellite dielectric oscillator and up-and down-mixer integral modules
yang zhou; he jun (the 13th electronic research institute; shijiazhuang 050051; china)

..............page:39-41

Void-type defects in large diameter czochralski silicon crystals
yu xue-gong; yang de-ren; ma xiang-yang; que duan-lin (state key laboratory of silicon material science zhejiang university; hangzhou 310027; china)

..............page:33-38

The design and production technology of MCM-C substrate
huang jin-sheng; fu hua-liang; zheng hong-yu (hebei semiconductor research institute; shijiazhuang 050051; china)

..............page:46-47,55

IC card automatic refueling system
zhang shu-xia; shi zhen-ke (the 13th electronic research institute; shijiazhuang 050002; china)

..............page:42-45

Monte carlo modeling of Ge surface segreation in Si_(1-x) Ge_x thin films
jiang liang-jun; ye zhi-zhen; huang jing-yun (state key lab of silicon materials of zhejiang university; hangzhou 310027; china)

..............page:56-58

A study of the characteristics of p-type Al/6H-SiC schottky diode
luo xiao-rong; gong min (physics department of sichuan university; chengdu 610064; china)

..............page:59-61

rf/ wei bo ye chang yong jian xie ji suo xie ( san )
jiang chang ling ; zhao xiao ning

..............page:62-63

Summarization of high power fast soft-recovery diode
zhang hai tao; zhang bin (institute of nuclear energy technology; tsinghua university; beijing 100084; china)

..............page:1-8,32

ri ben yong ban dao ti ji guang jia su zhi wu sheng chang
zhou jie ; bai mu

..............page:15

A polishing system for ultrapure water and evaluation of ultrapure water quality
lin yao-ze (the 58th electronic research institute; wuxi 214035; china)

..............page:48-51

2004 nian mems shi chang jiang da dao 70 yi mei yuan
liu xiao zuo

..............page:41

RF LDMOS power transistor and its applications
yun zhen-xin 1; dai hong-bo 2 (1.state owned no.970 factory; chengdu 610051; china) (2.the 13th electronic research institute; shijiazhuang 050051; china)

..............page:16-20,61

Study of GaN annealing technology
zhang hui-xiao; wu xi-long; yang hong-wei; zhang rong-gui (the 13th electronic research institute; shijiazhuang 050051; china)

..............page:27-32

suo ni , fu shi gong si chan liang zeng jia
tian hui juan

..............page:41