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Semiconductor Information
1001-5507
2001 Issue 5
Backgating effect in GaAs MESFETs
guo hui; yang rui xia; fu jun; liu li feng (hebei university of technology; tianjin 300130; china)
..............page:48-54
Design for hybrid integrated fault-detecting circuits
wang zhan kui; yao zhi hong (the 13th electronic research institute; shijiazhuang 050051; china)
..............page:33-35
New progress in research on PtSi/p-Si heterogenous films
li xue; yin jing hua (haerbin university of technology; haerbin 150080; china)
..............page:22-27
Extreme ultraviolet lithography technology
xie chang qing; ye tian chun (the 3rd lab of microelectronics r&d center; the chinese academy of sciences; beijing 100010; china)
..............page:28-32
lai zi na mi chi du wu li she bei de zui xin bao gao
liu xiao zuo
..............page:27
Research of TTV of GaAs polished wafer
yang hong xing; lu fei; zhao quan; liu chun xiang (the 46th electronic research institute; tianjin 300220; china)
..............page:55-57
State of the art and future trends of MEMS packaging
li xiu qing (the 13th electronic research institute; shijiazhuang 050051; china) zhou ji hong (hebei institute of architechtural science and technology; handan 056038; china)
..............page:1-4,27
LDMOS device for the third generation mobile communication systems
li jing (the 13th electronic research institute; shijiazhuang 050051; china)
..............page:10-13
Nanotechnology:a piece of magic rod of science
geng jin; zhou yan qiong; zi yin (troops 76140; guilin 541001; china)
..............page:14-16
Electronic service system for residence
liu hong yun (department of electronics; hebei teacher s university; shijiazhuang 050031; china)
..............page:36-39
Challenges of physical limits and countermeasures in the development of integrated circuits
kuang xiao fei (department of physics; lingling normal college; yongzhou 425006; china) jin xiang liang (the microelectronics center of chinese academy of sciences; beijing 100029; china)
..............page:17-21
Effect of neutral base recombination current on Early voltage of bipolar transistor
guo bao zeng; song deng yuan; wang yong qing; sun rong xia; tian hua (college of electronic & information engineering; hebei university; baoding 071002; china)
..............page:44-47,57
A1~4GHz mini-packed wideband amplifier
gao chang zheng; hao jing hong (the 13th electronic research institute; shijiazhuang 050051; china)
..............page:40-41,57
Study of pulse high power amplifier
yang da bao; yang zhou; zhang shi yong (the 13th electronic research institute; shijiazhuang 050051; china)
..............page:42-43
rf/ wei bo ye chang yong jian xie ji suo xie ( wu )
jiang chang ling ; zhao xiao ning
..............page:58-59
fc-bga feng zhuang jia su shi chu li qi da dao 100mhz
li yu sheng
..............page:61-62
157nm guang ke ji shu zhun bei hao liao ma ?
liu xiao zuo
..............page:62
Principle and applications of CMOS image sensor
cheng kai fu (the 44th electronic research institute; chongqing 400060; china)
..............page:5-9
quan qiu 300mm sheng chan xian quan mian qi dong
liu xiao zuo
..............page:63