ban dao ti qing bao zhong kan ci
ben kan bian ji bu

..............page:1

Material choices for 40Gb/s:SiGe vs GaAs and InP
he jun (the 13th electronic research institute; shijiazhuang 050051; china)

..............page:8-12

GaAs integrated circuit for optical communication
cheng ying (the 13th electronic research institute; shijiazhuang 050051; china)

..............page:22-24,58

Seminconductor quantum well material
zhang chen (the 46th electronic research institute; tianjin 300192; china)

..............page:18-21

High voltage planar discrete semiconductor device with single field limiting rings
wang de wen 1; fan ying jie 2; qiu hai chang 1 (1.shenai semiconductor co.; ltd.; shenzhen 518029; china) (2.the 13th electronic research institute; shijiazhuang 050051; china)

..............page:42-44

Fast recovery glass passivated diod dices
zhuang ming qian (shandong semiconductor institute; zibo 255311; china)

..............page:45-46

Research advances in GaN-based QW devices
li jia wei; wang yu; ye zhi zhen (state key laboratory of silicon materials; zhejiang university; hangzhou 310027; china)

..............page:13-17

Development and state of chinese semiconductor Si material
jiang rong hua; xiao shun zhen (emei semiconductor material research institute; emeishan 614200; china)

..............page:31-35

Deep sub-micron synchrotron radiation x-ray lithography simulation
xie chang qing; ye tian chun; chen da peng; li bing; xu xing cai (microelectronics r&d center; the chinese academy of sciences; beijing 100010; china)

..............page:36-38,44

New diluted magnetic semiconductor material(Ga,Mn)As based on GaAs
liu li feng; yang ru xia; guo hui (school of electrical engineering and information; hebei university of technology; tianjin 300130; china)

..............page:25-30,35

Research and development of Ⅲ-Ⅴ based magnetic semiconductors
yan fa wang; liang chun guang (the 13th electronic research institute; shijiazhuang 050051; china)

..............page:2-7

SiN_x∶H passivation of polycrystalline silicon solar cell
yang hong; wang he; chen guang de (institute of solar energy; xi an jiaotong university.xi an 710049; china) yu hua cong; xi jian ping (institute of nanometer; shanghai jiaotong university; shanghai 200030; china)

..............page:39-41,51

GaN film grown by low-pressure MOCVD
yang hong wei; yan fa wang; zhang qi lin (hebei semiconductor research institute; shijiazhuang 050051; china)

..............page:52-54

Influence of growing parameter on the performance of ZnO film in MC sputtering
zou lu; ye zhi zhen (state key laboratory of silicon materials; zhejiang university; hangzhou 310027; china)

..............page:55-58

zhong han he zi qi ye fu she san jia ji xie you xian gong si jun gong tou chan
wu qiang yi

..............page:61

mems chan ye cheng shu , ju da shang ji zai ji
li yu sheng

..............page:61

2001 nian zong mu ci

..............page:62-63

Two-dimensional electron gases induced in AlGaN/GaN heterostructures
xue fang shi (nanjing electronic devices institute; nanjing 210016; china)

..............page:47-51

rf/ wei bo ye chang yong jian xie ji suo xie ( liu )
jiang chang ling ; zhao xiao ning

..............page:59-60