ye jie kuai xun

..............page:44-47

xin xi chan ye bu dian zi di 13 yan jiu suo wei mi na mi yan jiu zhong xin

..............page:48

Si single-electron transistor with in-plane point-contact metal gates
sun jin-peng; wang tai-hong (institute of physics; chinese academy of sciences; beijing100080; china)

..............page:8-10,36

Solid state nanoelectronic device and molecular electronic device
guo wei-lian (school of electronic information eng.; tianjin univ.tianjin300072; china)

..............page:1-7

Single-electron transistor and its fabrication
guo hui ; guo wei-lian; zhang shi-lin; liang hui-lai (college of electronic information engineering; tianjin university; tianjin300072; china)

..............page:11-18

Influence of substrate temperature of nanocrystalline SnO_2 thin films
wang zhan-he; jiang yun-chen; zhu kan (department of electronics engineering; beijing institute of technology; beijing100081; china)

..............page:19-21

Application of DUV deep lithography in LIGA process
yu guo-bin; yao han-min; hu song; chen xing-jun (institute of optics and electronics; chinese academy of sciences; chengdu610209; china)

..............page:30-32

Preparation nanometer Si clusters by RF magnetron sputtering tech nique
ma zhen-chang; zong wan hua (hebei semiconductor research institute; shijiazhuang050051; china) heng cheng-lin; qin guo-gang (department of physics; beijing university; beijing100871; china) wu zheng-long (the beijing normal university; beijing100

..............page:22-24,29

Prime study of an electromagnetic microrelay fabricated by UV-LIGA technology
zhang peng; liu gang; tian yang-chao (national synchrotron radiation laboratory university of science and technology of china; hefei230029; china)

..............page:33-36

Carbon nanotube and its fabrication technology
zhang chen (the46th electronic research institute; tinjin300192; china)

..............page:25-29

A new type of projection electron beam lithography with angular limitation
gu wen-qi ; zhang fu-an (institute of electrical engineering; chinese academy of sciences; beijing100080; china)

..............page:37-41

Applications of process technology of EB direct-writing gate and T-shape gate
liu yu-gui ; wang wei-jun; luo si-wei; jiang ze-liu (hebei semiconductor research institute; shijiazhuang050051; china)

..............page:42-43