Study trend of carbon nanotube and its mass production
wei fei; liu tang; luo guo-hua; wang yao (dept .of chemistry tsinghua university; beijing100084; china)

..............page:1-4,11

Deep-submicron T-shaped gate fabrication technology using syn chrotron radiation x-ray lithography
xie chang-qing; chen da-peng; li bing; ye tian-chun (microelectronics r&d center; the chinese academy of sciences; beijing100010; china)

..............page:39-41

hu nan da xue hua xue sheng wu chuan gan yu ji liang xue guo jia zhong dian shi yan shi

..............page:48

Research on the high resolution characteristics of laser confocal bio-chip scanner
yu guo-bin; yao han-min; hu song; yan wei (institute of optics and electronics; chineseacademy of sciences; chengdu610209; china)

..............page:36-38

na mi ji shu zai fei su fa zhan

..............page:46-47

Quantum confinement effects of the lowest conduction band states in semiconductor quantum dots
zhu yun-lun; chen yuan; zhai ju-ting (department of physics; beijing university; beijing100871; china) li xiao-bai (state key laboratory of asic; shijiazhuang050051; china)

..............page:21-27

Research of micromechined high-g accelerometer
he hong-tao; yang yong-jun; xu yong-qing; lin hai-feng (the13th electronic research institute; micro /nano centre; shijiazhuang050051; china)

..............page:28-31

On-line study on giant magnetoresistance of Au /Fe multilayers during ion beam mixing
zhao yang; li zheng-xiao (dept.of technical physics; school of physics; beijing university; beijing100871; china)

..............page:42-45

Effect of boron pre-deposition on size distribution of self-assembled Ge islands fabricated by UHV/CVD
deng ning; huang wen-tao; wang yan; luo guang-li; chen pei-yi; li zhi-jian (institue of microelectonics; tsinghua university; beijing100084; china)

..............page:16-20

Intervalley electron transference in semiconductor and bulk oscilla tion
xue fang-shi (nanjing electron devices institute; nanjing210016; china)

..............page:5-11

Structural simulation and optimize of capacitive accelerometer
lin hai-feng; yang yong-jun; zheng feng (micro /nano technology centre; hsri ; shijiazhuang050051; china)

..............page:32-35

Research on TDDB of thin gate oxide
wang xiao-quan (department of materials science and engineering; zhejiang university; hangzhou310027; china)

..............page:12-15,20