1001-5507
2003 Issue 10
..............page:45-46
Research on wet etching technique for SiGe HBT emitter mesa for mation
xiong xiao-yi; liu zhi-nong; zhang wei; fu yu-xia; huang wen-tao; liu zhi-hong; chen chang-chun; dou wei-zhi ; qian pei-xin (institute of microelectronics of tsinghua university; beijing100084; china)
xiong xiao-yi; liu zhi-nong; zhang wei; fu yu-xia; huang wen-tao; liu zhi-hong; chen chang-chun; dou wei-zhi ; qian pei-xin (institute of microelectronics of tsinghua university; beijing100084; china)
..............page:15-16,41
zai di liu jie quan guo wei mi na mi ji shu xue shu da hui kai mu shi shang de jiang hua
ding heng gao
ding heng gao
..............page:1-4
The development of SiGe HBT and the application in RF circuits
yao fei; cheng bu-wen; wang qi-ming (state key laboratory on integrated optoelectronics; institute of semiconductors; chinese academy of sciences; beijing100083; china)
yao fei; cheng bu-wen; wang qi-ming (state key laboratory on integrated optoelectronics; institute of semiconductors; chinese academy of sciences; beijing100083; china)
..............page:5-14
Optimized MBE heterostructure material growth technology by RHEED
xie zi-li 1 ; qiu kai 2 ; yin zhi-jun 2(1.the department of physics; nanjing university; nanjing210016; china; 2.nanjing electronic device institute; nanjing210016; china)
xie zi-li 1 ; qiu kai 2 ; yin zhi-jun 2(1.the department of physics; nanjing university; nanjing210016; china; 2.nanjing electronic device institute; nanjing210016; china)
..............page:20-26
..............page:14
Preparation of nano-metallic oxide hollow spheres
(co ntinued)yang xiao-hui ; song xiu-qin; zhang xue-hong (school of chemistry; hebei normal university; shijiazhuang050016; china)
(co ntinued)yang xiao-hui ; song xiu-qin; zhang xue-hong (school of chemistry; hebei normal university; shijiazhuang050016; china)
..............page:27-29
IC strides towards the new technology of 90nm
zhu liang-chen; hu yue-li; ran feng (microelectronics r&d centre; shanghai university; shanghai200072; china)
zhu liang-chen; hu yue-li; ran feng (microelectronics r&d centre; shanghai university; shanghai200072; china)
..............page:42-44
The residual stresses in MEMS thin films
zhu chang-chun; zhao hong-po; han jian-qiang; cui wan-zhao (institute of vacuum microelectronics; school of electronics and information engineering; xi an jiaotong university; xi an710049; china)
zhu chang-chun; zhao hong-po; han jian-qiang; cui wan-zhao (institute of vacuum microelectronics; school of electronics and information engineering; xi an jiaotong university; xi an710049; china)
..............page:30-34
..............page:46-47
Reliability of DC characteristics in mesa Si/SiGe/Si HBT
cui fu-xian 1 ; zhang wan-rong 2 (1.the13th research instiute; cetc; shijiazhuang050051; china; 2.beijing insititute of technology; beijing100022; china)
cui fu-xian 1 ; zhang wan-rong 2 (1.the13th research instiute; cetc; shijiazhuang050051; china; 2.beijing insititute of technology; beijing100022; china)
..............page:17-19
Discussion of MEMS application in electrical equipments
kang ming-cai; wu jun-ji; huang jin-an (nanjing university of science&technology; nanjing210094; china)
kang ming-cai; wu jun-ji; huang jin-an (nanjing university of science&technology; nanjing210094; china)
..............page:35-37
Design of control system of the DY-2003 mini-microarrayer
yan xian-yong; guo shao-peng; zhang chun-ye; liu hong; wang jun; wu lan-jun (institute of electrical engineering; chinese academy of sciences; beijing100080; china)
yan xian-yong; guo shao-peng; zhang chun-ye; liu hong; wang jun; wu lan-jun (institute of electrical engineering; chinese academy of sciences; beijing100080; china)
..............page:38-41