ming ci shu yu shi yi dan dian zi xue

..............page:26

A review and recent progress on C-RAM
feng song-lin; song zhi-tang; liu bo; liu wei-li(the research center of functional semiconductor film engineering technology; state key laboratory offunctional materials for informatics; shanghai institute of micro-system and information technology; chinese academy of sciences; shanghai 200050; china)

..............page:1-7,39

Fabrication process of micro-electroplating molds with AZ4620
wang ming-liang; zheng jian-ming; sun dao-heng(department of mech&elect engineering; xiamen university; xiamen 361005; china)

..............page:27-31

ArchitectTM——A MEMS system modeling virtual manufacturing tool
m. g. da silva1; s. liu2(1.coventor inc. cambridge; ma usa; 2.imag industries; inc. beijing 100037; china)

..............page:32-39

ming ci shu yu shi yi liang zi sui dao xiao ying

..............page:21

Stress solution to via hole cracks in GaAs MMIC
chen chuan-rong; zhao xia; jiang you-quan(nanjing electronic device institute; nanjing 210016; china)

..............page:42-45

guo wai ban dao ti zhi zao she bei gong si zui xin dong tai

..............page:46-48

dong zhi cai yong 90nm chu li ji shu shi nand shan cun rong liang da dao 4gb shui ping

..............page:48

Conducting mechanism and theory conductivity of antimony doped tin oxide
yang jian-guang; tang mo-tang; tang chao-bo; yang sheng-hai; zhang bao-ping(school of metallurgical science and technology; central south university; changsha 410083; china)

..............page:18-21

Technique of conjugate focus imaging and the using in biochip detecting
zhao li-xin; hu song; yan wei; luo zheng-quan(institute of optics and electronics; chinese academy of sciences; chengdu 610209; china)

..............page:40-41,45

Cage clusters materials
zhang chen(the 46th research institute; cetc; tianjin 300192; china)

..............page:22-26

The progress in the study of InP based strain induced self-assembly materials and their opto-electronic devices
lei wen1; chen yong-hai1; cheng wei-ming2; che xiao-ling1; liu jun-qi1; huang xiu-qi1; wang zhan-guo1(1.key laboratory of semiconductor materials; institute of semiconductors; chinese academy of sciences; beijing 100083; china; 2.department of electronic science and technology; huazhong university of science and technology; wuhan 430074; china)

..............page:8-17