..............page:209-213
..............page:214-219
..............page:220-223,248
Study of Luminescence Character on GaN Films
li jing1; feng qian2; he xiu-kun1; ru qiong-na1; zhou zhi-hui1 (1.the 46th research institute; cetc; tianjin 300192; china; 2.research institute of microelectronic; xi an electronics technology university; xi an 710071; china)
..............page:224-226
..............page:227-232
..............page:237-243
..............page:233-236
..............page:208-226,243
New Progress of the Preparation for Single-Electron Devices
peng ying-cai1; 2; zhao xin-wei3; 4 (1.college of electronic and informational engineering; hebei university; baoding 071002; china; 2.key laboratory of semiconductor material science; institute of semiconductors; chinese academy of sciences; beijing 100083; china; 3.department of physics; tokyo university of science; tokyo 126-8601; japan; 4.laboratory of nano materials and nanodeviccs; institute of microelectrornics; chinese academy of sciences; beijing 100029; china)
..............page:202-208
..............page:244-248