1001-5507
2006 Issue 4
High k Gate Dielectric Materials and Si Nanotransistor(Continued)
zhang bang-weidepartment of applied physics; hunan university; changsha 410082; china
zhang bang-weidepartment of applied physics; hunan university; changsha 410082; china
..............page:161-166
Preparing Linear NTC Sensitive Ceramic Material with Nano-Powders
wang meng-kui1; wang jun-yue21.department of physics; bohai university; jinzhou 121000; china; 2.jingzhou audio-visual education center; jinzhou 121000; china
wang meng-kui1; wang jun-yue21.department of physics; bohai university; jinzhou 121000; china; 2.jingzhou audio-visual education center; jinzhou 121000; china
..............page:177-180,189
Textured ZnO Transparent Conductive Thin Film Prepared by Mid-Frequency Magnetron Sputtering
liu jia-yu1; 2; yang rui-xia1; niu chen-liang1; xue jun-ming2; zhao ying2; geng xin-hua21.school of information engineering; hebei university of technology; tianjin 300130; china; 2.institute of photo-electronic thin film devices and technique of nankai university; key laboratory of photoelectronics thin film devices and technique of tianjin; key laboratory of optoelectronic information science and technology; chinese ministry of education; tianjin 300071; china
liu jia-yu1; 2; yang rui-xia1; niu chen-liang1; xue jun-ming2; zhao ying2; geng xin-hua21.school of information engineering; hebei university of technology; tianjin 300130; china; 2.institute of photo-electronic thin film devices and technique of nankai university; key laboratory of photoelectronics thin film devices and technique of tianjin; key laboratory of optoelectronic information science and technology; chinese ministry of education; tianjin 300071; china
..............page:186-189
New Passive Reflective Display Pixel Using Electrowetting
hu huan; wu jian-gang; zhao xiao-xi; wang zhe-yao; yue rui-feng; liu li-tianinstitute of microelectronics; tsinghua university; beijing 100084; china
hu huan; wu jian-gang; zhao xiao-xi; wang zhe-yao; yue rui-feng; liu li-tianinstitute of microelectronics; tsinghua university; beijing 100084; china
..............page:190-193
MOSFET Modeling for Analog IC Simulation under Ultra-Deep Submicron Technologies
duan cheng-hua; liu mei-liansiecdm; graduate school of the chinese academy of sciences; the institute of electronics of graduate school of the chinese academy of sciences; beijing 100049; china
duan cheng-hua; liu mei-liansiecdm; graduate school of the chinese academy of sciences; the institute of electronics of graduate school of the chinese academy of sciences; beijing 100049; china
..............page:203-208
Development and Study on CoPt Magnetic Nanomaterials
chen qiang; ge hong-liang; wu qiong; wei guo-ying; shu kang-ying; cui yu-jian; wang xin-qingzhejiang key laboratory of magnetism; china jiliang university; hangzhou 310018; china
chen qiang; ge hong-liang; wu qiong; wei guo-ying; shu kang-ying; cui yu-jian; wang xin-qingzhejiang key laboratory of magnetism; china jiliang university; hangzhou 310018; china
..............page:181-185,189
Field Emission Characters of Compound Film of Amorphous Carbon and Mo2C
wang zhao-yong; yao ning; zhang bing-lin; jiu zhi-xian; deng ji-cai; yuan ze-mingkey laboratory of materials physics and department of physics; zhengzhou university; zhengzhou 450052; china
wang zhao-yong; yao ning; zhang bing-lin; jiu zhi-xian; deng ji-cai; yuan ze-mingkey laboratory of materials physics and department of physics; zhengzhou university; zhengzhou 450052; china
..............page:194-196
Electric Charge Accumulation Effect in RTD:Lecture of Resonant Tunneling Devices(4)
guo wei-lianschool of information and communication eng.; tianjin polytechnic university; tianjin 300160; china; national key laboratory of asic; shijiazhuang 050051; china; school of electronic information eng.; tianjin university; tianjin 300072; china
guo wei-lianschool of information and communication eng.; tianjin polytechnic university; tianjin 300160; china; national key laboratory of asic; shijiazhuang 050051; china; school of electronic information eng.; tianjin university; tianjin 300072; china
..............page:172-176
Physical Model of Resonant Tunneling Diode:Lecture of Resonant Tunneling Devices(3)
guo wei-lianschool of information and communication eng.; tianjin polytechnic university; tianjin 300160; china; national key laboratory of asic; shijiazhuang 050051; china; school of electronic information eng.; tianjin university; tianjin 300072; china
guo wei-lianschool of information and communication eng.; tianjin polytechnic university; tianjin 300160; china; national key laboratory of asic; shijiazhuang 050051; china; school of electronic information eng.; tianjin university; tianjin 300072; china
..............page:167-171
New Progress and Applications of Ultra High Speed Electro-Optic Sampling Technique
wang lu1; liu qing-gang1; li suo-yin2; wei ze-feng3; li min1; li da-chao1; hu xiao-tang11.state key laboratory of precision measuring technology and instruments; tianjin university; tianjin 300072; china; 2.the 13th research institute; cetc; shijiazhuang 050051; china; 3.the artillary academy of pla; hefei 230031; china
wang lu1; liu qing-gang1; li suo-yin2; wei ze-feng3; li min1; li da-chao1; hu xiao-tang11.state key laboratory of precision measuring technology and instruments; tianjin university; tianjin 300072; china; 2.the 13th research institute; cetc; shijiazhuang 050051; china; 3.the artillary academy of pla; hefei 230031; china
..............page:197-202