1001-5507
2007 Issue 12
..............page:1097
Design of Lithography-Equipment Bottom Side Alignment System Based on USB2.0 and CPLD
deng jiugen1; 2; zhang zhengrong1; hu song1; tang xiaoping1; ma ping1(1.institute of optics and electronics; the chinese academy of sciences; chengdu 610209; china; 2.graduate school of the chinese academy of sciences; beijing 100039; china)
deng jiugen1; 2; zhang zhengrong1; hu song1; tang xiaoping1; ma ping1(1.institute of optics and electronics; the chinese academy of sciences; chengdu 610209; china; 2.graduate school of the chinese academy of sciences; beijing 100039; china)
..............page:1082-1086
Research on Barrier Layer Ta CMP and Slurry on the Copper Multilayer Interconnection in ULSI
wu yahong; liu yuling; ma zhenguo; wang lifa; chen jing(institute of microelectronics; hebei university of technology; tianjin 300130; china)
wu yahong; liu yuling; ma zhenguo; wang lifa; chen jing(institute of microelectronics; hebei university of technology; tianjin 300130; china)
..............page:1078-1081
Theoretical Calculation of Sensing Characteristic on Surface Plasmon Resonance Waveguide Sensor
wu bin; wang qingkang(key laboratory for thin film and microfabrication technology of ministry of education; national key laboratory of micro /nano fabrication technology; research institute of micro/nano science and technology; shanghai jiao tong university; shanghai 200030; china)
wu bin; wang qingkang(key laboratory for thin film and microfabrication technology of ministry of education; national key laboratory of micro /nano fabrication technology; research institute of micro/nano science and technology; shanghai jiao tong university; shanghai 200030; china)
..............page:1063-1067
Study on the Patent Classification for Nanotechnology
yang yingge(institute of science & technical information of shanghai; shanghai 200031; china)
yang yingge(institute of science & technical information of shanghai; shanghai 200031; china)
..............page:1048-1052,1062
Recent Development of SiC-Based Diluted Magnetic Semiconductors Materials
jin chengganga; c; wu xuemeia; c; zhuge lanjianb; c(a.department of physics; b.analysis and testing center; c.jiangsu key laboratory of thin film; soochow university; suzhou 215006; china)
jin chengganga; c; wu xuemeia; c; zhuge lanjianb; c(a.department of physics; b.analysis and testing center; c.jiangsu key laboratory of thin film; soochow university; suzhou 215006; china)
..............page:1053-1058,1072
Preparation of Au/SiO_2 Composite Nanoparticle Films and Study on Its Annealing Behavior
zhang qiuxia; li yuguo; wang jianbo; zhang jingyao; cui chuanwen; zhang yuefu(institute of semiconductor; college of physics and electronics; shandong normal universitty; ji nan 250014; china)
zhang qiuxia; li yuguo; wang jianbo; zhang jingyao; cui chuanwen; zhang yuefu(institute of semiconductor; college of physics and electronics; shandong normal universitty; ji nan 250014; china)
..............page:1059-1062
Study on the Rotation Capacity and the Precision of Micro Flexible Hinges
qiu lifang; nan tieling; liu lin(mechanical engineering school; university of science and technology beijing; beijing 100083; china)
qiu lifang; nan tieling; liu lin(mechanical engineering school; university of science and technology beijing; beijing 100083; china)
..............page:1068-1072
Recent Developments of Lab-on-a-Chip in POCT
chen yu1; jing xiangmeng2; zhu jun2; chen xiang2; chen di2(1.department of computer science; hubei institute of education; wuhan 430205; china; 2.institute of micro/nano science and technology; shanghai jiao tong university; shanghai 200030; china)
chen yu1; jing xiangmeng2; zhu jun2; chen xiang2; chen di2(1.department of computer science; hubei institute of education; wuhan 430205; china; 2.institute of micro/nano science and technology; shanghai jiao tong university; shanghai 200030; china)
..............page:1036-1042,1047
Design and Development of Nano CMOS IC
dai yujie; l yingjie; zhang xiaoxing(nan kai university; tianjin 300071; china)
dai yujie; l yingjie; zhang xiaoxing(nan kai university; tianjin 300071; china)
..............page:1031-1035
Research on Off-State Leakage Current in Nano-Scale MOSFET with High-k Gate Dielectrics
yang jianhong; li guifang; liu huilan(institute of microelectronics; school of physical science and technology; lanzhou university; lanzhou 730000; china)
yang jianhong; li guifang; liu huilan(institute of microelectronics; school of physical science and technology; lanzhou university; lanzhou 730000; china)
..............page:1043-1047
..............page:1091-1096
Test Structure of the Silicon Material Seebeck Coefficients for MEMS Devices
ma hongyu; huang qing an; li weihua(key laboratory of mems of ministry of education; southeast university; nanjing 210096; china)
ma hongyu; huang qing an; li weihua(key laboratory of mems of ministry of education; southeast university; nanjing 210096; china)
..............page:1073-1077,1081
Analysis and Design of a ±1.5V 1.37×10~(-6)/℃ Current-Mode CMOS Bandgap Reference
wang zhao1; zhang zhiyong1; zhao wu1; cheng weidong2(1.school of information science and technololy; northwest university; xi an 710069; china; 2.xi an institute of microelectronics; xi an 710054; china)
wang zhao1; zhang zhiyong1; zhao wu1; cheng weidong2(1.school of information science and technololy; northwest university; xi an 710069; china; 2.xi an institute of microelectronics; xi an 710054; china)
..............page:1087-1090