Deep Impurities and Defects in InP (Continued)
sun niefeng1; zhao youwen2; sun tongnian1(1.national key laboratory of asic; the 13th research institute; cetc; shijiazhuang 050051; china; 2.institute of semiconductors; the chinese academy of sciences; beijing 100083; china)
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GeSi/Si Resonant Tunneling Diodes
guo weilian1; 2; 3(1.school of information and communication eng.; tianjin polytechnic university; tianjin 300160; china; 2.national key laboratory of asic; shijiazhuang 050051; china; 3.school of electronic information eng.; tianjin university; tianjin 300072; china)
..............page:627-634
..............page:639-642
..............page:677-680
..............page:681-682
..............page:662-667
..............page:672-676
..............page:668-671
..............page:654-661
..............page:647-653
..............page:635-638
..............page:643-646,671