..............page:591-594
..............page:577-586
Simulation and Analysis of Single-Electron Memory with SIMON
ren guoyan1; 2; huang qinyi1 (1.school of electronic & information engineering; chongqing university of science and technology; chongqing 401331; china; 2.department of electrical and computer engineering; university of windsor; windsor; ontario; canada n9b 3p4)
..............page:587-590
..............page:610-615
Substrate Materials of Flexible MEMS and Its Application in Sensors
zheng pai1; wu fengshun1; 2; liu hui1; zhou longzao1; wu yiping1; 2 (1.state key laboratory of materials processing and die &mould technology; huazhong university of science and technology; wuhan 430074; china; 2.wuhan national laboratory for optoelectronics; wuhan 430074; china)
..............page:604-609
..............page:599-603
..............page:595-598,620
..............page:632-635
..............page:616-620
A Self-Calibration Technique Based on 16 Bit SAR ADCs
qiao gaoshuai; dai qingyuan; sun lei; xie fang (institute of micro/nano science and technology; national key laboratory of nano/micro fabrication technology; key laboratory for thin film and micro-fabrication of ministry of education; shanghai jiaotong university; shanghai 200240; china)
..............page:636-639
Research on Wet Etching of Doped GaN
yao guangrui; fan guanghan; li jun; yang hao; hu shenglan (institute of opto-electronic materials and technology; south china normal university; guangzhou 510631; china)
..............page:621-626,635
..............page:627-631