..............page:314-318
Study of InGaN Films Grown by MOCVD
xu feng1; wu zhenlong1; shao yong1; xu zhou1; liu qijia1; liu bin2; xie zili2; chen peng1; 2 (1.institute of opto-electronic nju&yangzhou; yangzhou 225009; china; 2.jiangsu provincial key laboratory of advanced photonic and electronic materials; department of physics; nanjing university; nanjing 210093; china)
..............page:274-278,300
..............page:257-262
..............page:279-284
Research Progress of Silicon Nanowires and Devices
song jingwei1; 2; zhou xiang2; chen jiajun1; ma xiying2 (1.college of physics and electronic information; china west normal university; nanchong 637002; china; 2.institute of photoelectrical materials; college of mathematics; shaoxing university; shaoxing 312000; china)
..............page:285-291
..............page:292-295
..............page:296-300
..............page:311-313,318
..............page:270-273
RTD/UTC-PD High Speed Photo-Controlled MOBILE
guo weilian1; 2; 3 (1.school of information and communication engineering; tianjin polytechnic university; tianjin 300160; china; 2.national key laboratory of asic; shijiazhuang 050051; china; 3.school of electronic information and engineering; tianjin university; tianjin 300072; china)
..............page:263-269,291
..............page:301-304
..............page:305-310