1001-5507
2011 Issue 9
..............page:612
Nanoimprint Lithography Resist
Zhao Bin1;Zhang Jing2;Zhou Weimin2;Wang Jinhe2;Liu Yanbo2;Zhang Yanping2;Shi Liyi1;Zhang Jianping1 ;Shanghai 200237;China)
Zhao Bin1;Zhang Jing2;Zhou Weimin2;Wang Jinhe2;Liu Yanbo2;Zhang Yanping2;Shi Liyi1;Zhang Jianping1 ;Shanghai 200237;China)
..............page:606-612
Effect of Anion on Copper Chemical Mechanical Polishing
Tang Lijuan;Chu Xiangfeng;Dong Yongping;Wu Fanghui;Bai Linshan
Tang Lijuan;Chu Xiangfeng;Dong Yongping;Wu Fanghui;Bai Linshan
..............page:596-599,605
..............page:567
Synthesis and Properties of a Novel Nickel Hollow Nanosphere
Hu Yonghong;Xu Zhihua
Hu Yonghong;Xu Zhihua
..............page:562-567
Preparation and Performance of the Ni-Mn-Ga Magnetron Sputtering Target Material Alloy
Chen Fenghua;Zhang Mingang;Chai Yuesheng;Yang Libin;Xiong Jie ;
Chen Fenghua;Zhang Mingang;Chai Yuesheng;Yang Libin;Xiong Jie ;
..............page:568-572,582
Synchronous Scanning Control for the Lithography Based on Fuzzy PID
Sheng Zhuang1;2;Tang Xiaoping1;Hu Song1;Li Lanlan1;2;Xie Fei1;2;Li Jinlong1;2;Xu Feng1;2
Sheng Zhuang1;2;Tang Xiaoping1;Hu Song1;Li Lanlan1;2;Xie Fei1;2;Li Jinlong1;2;Xu Feng1;2
..............page:591-595,605
Exposition of the p-n Junction Theory from the Angle of Majority Carriers
Yang Jianhong;Zhao Feihu;Wu Chenglong;Sheng Xiaoyan
Yang Jianhong;Zhao Feihu;Wu Chenglong;Sheng Xiaoyan
..............page:549-552,557
Design and Process of S-Band High Power SiC MESFETs
Fu Xingchang1;Pan Hongshu2
Fu Xingchang1;Pan Hongshu2
..............page:558-561,582
Research and Development Status of MOEMS Accelerometers
Feng Lishuang;Chi Yuanyuan;Zhou Zhen;Yao Baoyin
Feng Lishuang;Chi Yuanyuan;Zhou Zhen;Yao Baoyin
..............page:583-590
Latest Research Progress of MEMS Microneedles
Cao Yutiana;b;Zhu Juna;b;Cao Yinga;b;Li Yiguia;b;Chen Xianga;b;Chen Dia;b
Cao Yutiana;b;Zhu Juna;b;Cao Yinga;b;Li Yiguia;b;Chen Xianga;b;Chen Dia;b
..............page:577-582
Synthesis of Silicon Nanocrystals by HFCVD and Their Photoluminescence
Sun Shiju;Hu Yi;Han Wei
Sun Shiju;Hu Yi;Han Wei
..............page:573-576
..............page:615-616
Breakdown Voltage of BLD SOI High Voltage Devices
Li Qi;Wang Weidong;Zhang Yang;Zhao Qiuming
Li Qi;Wang Weidong;Zhang Yang;Zhao Qiuming
..............page:553-557
Preparation and Characterization of Nanometer Step Standards
Lei Lihua1;2;Zou Ziying1;2;Li Yuan1;2;Wang Lihua2;Li Dongsheng1;2
Lei Lihua1;2;Zou Ziying1;2;Li Yuan1;2;Wang Lihua2;Li Dongsheng1;2
..............page:600-605
..............page:613-614