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Semiconductor Information
1001-5507
2013 Issue 2
Study of S-Band GaN HEMTs with High Power and High Efficiency
Liu Zhen1;Wu Hongjiang1;Hu Yansheng1;Wu Ahui2;Yin Jun1;Zhang Zhiguo2
..............page:78-80,94
Fabrication of the Triode FED for Cathode Structure of Segmented Circular Carbon Nanotubes
Li Yukui1;Li Xiaoquan1;Zeng Fanguang2
..............page:74-77,117
Electron Beam Single-Line Exposure and Its Application
Zhao Min1;Liu Guiying1;Chen Baoqin2;Niu Jiebin2
..............page:106-111
Detection and Analysis of the Responsivity and NEP for HEMT Terahertz Detectors
Yang Xinxin;Sun Jiandong;Qin Hua
..............page:69-73,99
Research Progress of the Single-Layer MoS2
Gu Weixia;Ma Xiying
..............page:81-85
Design of Low Cross-Coupling Triaxial Micro Accelerometers
Chen Yinghui;Tang Bin;Shi Zhigui;Xie Guofen
..............page:95-99
guo ji shi dian
wang ling
..............page:129-132
New Method of Ultra-Thin Chip Fabrication with TSV for 3D Packaging
Yuan Jiaojiaoa;Lü Zhichengb;Wang Xuefanga;c;Shi Shuaia;Lü Yapinga; Zhang Xuebina;Fang Jinga
..............page:118-123,128
Research of CMP Slurry Silica Sol Purification Stability Technology
Zhang Chao;Liu Yuling;Gan Xiaowei
..............page:112-117
Research on the Preparation and Oxidation Activity of the Formic Acid of Pd-Ru/C Catalysts
Luo Yuanlai1;2;Pang Daobiao1;Cai Weikai1;Lin Zhengfeng1;Hou Meifang3;Xu Bin1
..............page:124-128